Beam lead technology

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Beam lead integrated circuits

Beam lead technology is a method of fabricating a

integrated circuits. This technology eliminated the labor-intensive wire-bonding process that was commonly used for integrated circuits at the time. It also enabled the automated assembly of semiconductor chips onto larger substrates, facilitating the production of hybrid integrated circuits. [1]

History

In the early 1960s, M.P. Lepselter

devices and leaving them with self-supporting beam leads or internal chiplets cantilevered
beyond the semiconductor material. These contacts not only served as electrical leads but also provided structural support for the devices.

Patents

Patented inventions included:

  1. Selective Removal of Material Using Cathodic Sputtering (Plasma Etching/RIE), US Patent #3,271,286; issued 1966
  2. PtSi Semiconductor Contacts and Schottky Diodes (PtSi Schottky Diodes), US Patent #3,274,670; issued 1966
  3. Semiconductive Device Including Beam Leads (Beam Leads, Ti-Pt-Au metal system), US Patent #3,426,252; issued 1969
  4. Method for Making Closely Spaced Conductive Layers (Air-Insulated Crossovers, air bridges, RF-Switch), US Patent #3,461,524; issued 1969
  5. Vibratory Reed Device (
    MEMS
    ), US Patent #3,609,593; issued 1971

Legacy

This technology, also known as air-bridge technology, has established itself in

MEMS
).

References

  1. ISBN 0-412-08441-4
    , page 8-75
  2. ^ M.P. Lepselter, et al., "Beam-Lead Devices and Integrated Circuits", Proceedings of the IEEE, Vol. 53 No 4 (1965), p.405.
  3. ^ Presentation at Electron Devices Meeting, October 29, 1964, Washington, D.C.
  • Beam Lead Technology, M.P.Lepselter, Bell System Technical Journal 45. (2) (1966), pp. 233–253
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