Chen Xingbi

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In this Chinese name, the family name is Chen.
Chen Xingbi
陈星弼
Born(1931-01-28)28 January 1931
ISPSD Pioneer Award (2015)
ISPSD Hall of Fame (2019)
Scientific career
FieldsPower semiconductor devices
InstitutionsUniversity of Electronic Science and Technology of China

Chen Xingbi (

ISPSD
Hall of Fame in 2019.

Early life and education

Chen was born on 28 January 1931 in Shanghai, Republic of China, with his ancestral home in Pujiang County, Zhejiang.[1][2] His father, Chen Dezheng (陈德徵), was a Kuomintang politician who was dismissed for offending Chiang Kai-shek. His mother, Xu Hemei (徐呵梅), studied literature at Shanghai University.[3]

Chen entered primary school at the age of only three. When he was six, the

Hechuan, where he completed his primary and middle school education under harsh conditions.[3]

After the end of the

Second World War, Chen's family returned to Shanghai, where he studied at Jingye High School [zh] and was admitted to the Department of Electrical Engineering of Tongji University with a scholarship.[3]

Career

Upon graduation from Tongji University in 1952, Chen was assigned to teach at the Department of Electrical Engineering of Xiamen University. A year later, he was transferred to the faculty of radio electronics at Nanjing Institute of Technology (now Southeast University).[3]

In 1956, Chen furthered his studies at the Institute of Applied Physics of the

semiconductors for two and half years. He joined the faculty of the newly established University of Electronic Science and Technology of China (UESTC) in Chengdu in 1959.[3]

During the Cultural Revolution (1966–1976), Chen was persecuted because of his family's Kuomintang background and performed manual labour at a May Seventh Cadre School. After the end of the period he went to the United States in 1980 as a visiting scholar[3] at Ohio State University and the University of California, Berkeley.[4]

Upon returning to China in 1983, Chen was appointed a department chair at UESTC. He soon established the Institute of Microelectronics at the university and focused his research on

University of Wales Swansea.[4]

Chen died on 4 December 2019 in Chengdu, aged 88.[1][5]

Contributions and honours

Chen was a leading expert on

VDMOS, LDMOS, insulated-gate bipolar transistor (IGBT), and other semiconductor devices.[3][4] He published more than 200 research papers and held over 40 patents in China, the United States, and other countries.[1][5]

He was elected an academician of the Chinese Academy of Sciences in 1999 and a life fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2019.[1] In 2015, he won the Pioneer Award from IEEE's International Symposium on Power Semiconductor Devices and ICs (ISPSD), the first awardee from the Asia-Pacific region.[5] In May 2019, he was inducted into the ISPSD Hall of Fame "for contributions to superjunction power semiconductor devices".[7][8]

References

  1. ^ a b c d ""中国功率半导体领路人"陈星弼院士在成都逝世". Xinhua. 4 December 2019. Archived from the original on 5 December 2019. Retrieved 5 December 2019.
  2. ^ "Biography of Chen Xingbi". China Vitae. Archived from the original on 18 September 2015. Retrieved 5 December 2019.
  3. ^ a b c d e f g h "陈星弼". Jiusan Society. Archived from the original on 17 May 2012. Retrieved 7 December 2019.
  4. ^ a b c "Chen Xingbi". University of Electronic Science and Technology of China. Archived from the original on 14 November 2019. Retrieved 7 December 2019.
  5. ^ a b c d "China's power semiconductor pioneer dies at 89". China.org.cn. 5 December 2019. Archived from the original on 5 December 2019. Retrieved 5 December 2019.
  6. University of Electronic Science & Technology of China
     
  7. ^ "ISPSD Hall of Fame". ISPSD. May 2019. Archived from the original on 18 November 2019. Retrieved 7 December 2019.
  8. ISBN 978-1-7281-0580-2
    .
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