Dawon Kahng

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In this Korean name, the family name is Kahng.
Dawon Kahng
강대원
Born(1931-05-04)May 4, 1931
Electrical engineer
Known forMOSFET (MOS transistor)
PMOS and NMOS
Schottky diode
Nanolayer-base transistor
Floating-gate MOSFET
Floating-gate memory
Reprogrammable ROM
Korean name
Hangul
강대원
Hanja
Revised RomanizationGang Dae-won
McCune–ReischauerKang Daewŏn

Dawon Kahng (

electronic equipment
.

Kahng and Atalla later proposed the concept of the MOS

floating-gate memory cells for non-volatile memory (NVM) and reprogrammable read-only memory (ROM), which became the basis for EPROM (erasable programmable ROM), EEPROM (electrically erasable programmable ROM) and flash memory technologies. Kahng was inducted into the National Inventors Hall of Fame
in 2009.

Biography

Dawon Kahng was born on May 4, 1931, in

Chōsen (today Seoul, South Korea). He studied physics at Seoul National University in South Korea, and immigrated to the United States in 1955 to attend Ohio State University, where he received a doctorate in electrical engineering in 1959.[3]

Mohamed Atalla
at Bell Labs in 1959.

He was a researcher at

Mohamed Atalla in 1959.[4] They fabricated both PMOS and NMOS devices with a 20 µm process.[5]

Extending their work on MOS technology, Kahng and Atalla next did pioneering work on

hot carrier devices, which used what would later be called a Schottky barrier.[6] The Schottky diode, also known as the Schottky-barrier diode, was theorized for years, but was first practically realized as a result of the work of Kahng and Atalla during 1960–1961.[7] They published their results in 1962 and called their device the "hot electron" triode structure with semiconductor-metal emitter.[8] The Schottky diode went on to assume a prominent role in mixer applications.[7] They later conducted further research on high-frequency Schottky diodes.[citation needed
]

In 1962, Kahng and Atalla proposed and demonstrated an early

n-type germanium (n-Ge), while the point contact was n-type silicon (n-Si).[9]

Along with his colleague

ferro-electric semiconductors and luminous materials, and made important contributions to the field of electroluminescence.[citation needed
]

After retiring from Bell Laboratories, he became the founding president of the

Franklin Institute and the Distinguished Alumnus Award of the Ohio State University College of Engineering. He died of complications following emergency surgery for a ruptured aortic aneurysm in 1992.[2]

Awards and honors

Kahng and

list of IEEE milestones in electronics.[15]

References

  1. ^ "Dawon Kahng". National Inventors Hall of Fame. 2009. Archived from the original on 28 March 2009. Retrieved 28 March 2009.
  2. ^ a b Daniels, Lee A. (28 May 1992). "New York Times obituary". The New York Times. Archived from the original on 2020-07-26. Retrieved 2017-02-15.
  3. ^ https://etd.ohiolink.edu/apexprod/rws_etd/send_file/send?accession=osu1486474943923246&disposition=inline [bare URL PDF]
  4. ^ "1960 - Metal Oxide Semiconductor (MOS) Transistor Demonstrated". Computer History Museum. Archived from the original on 8 October 2012. Retrieved 11 November 2012.
  5. ISBN 9783540342588
    .
  6. ISBN 9780801886393. Archived
    from the original on 2020-03-21. Retrieved 2019-08-19.
  7. ^
    U.S. Government Printing Office. 1973. p. 1475. Archived
    from the original on 2020-03-07. Retrieved 2019-08-19.
  8. S2CID 51637380
    .
  9. ISBN 9781420075519. Archived
    from the original on 2020-03-08. Retrieved 2019-09-14.
  10. ^ D. Kahng and S. M. Sze, "A floating-gate and its application to memory devices", The Bell System Technical Journal, vol. 46, no. 4, 1967, pp. 1288–1295
  11. ^ "1971: Reusable semiconductor ROM introduced". Computer History Museum. Archived from the original on 3 October 2019. Retrieved 19 June 2019.
  12. ISBN 9780852293195
    . Three scientists were named recipients of the Franklin lnstitute's Stuart Ballantine Medal in 1975 [...] Martin M. Atalla, president of Atalla Technovations in California, and Dawon Kahng of Bell Laboratories were chosen "for their contributions to semiconductor silicon-silicon dioxide technology, and for the development of the MOS insulated gate, field-effect transistor.
  13. The Franklin Institute. 14 January 2014. Archived
    from the original on 23 August 2019. Retrieved 23 August 2019.
  14. ^ "Dawon Kahng". National Inventors Hall of Fame. Archived from the original on 27 October 2019. Retrieved 27 June 2019.
  15. ^ "Milestones:List of IEEE Milestones". Institute of Electrical and Electronics Engineers. Archived from the original on 13 July 2019. Retrieved 25 July 2019.
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