Ian Munro Ross
Ian Munro Ross | |
---|---|
Born | Southport, England | August 15, 1927
Died | March 10, 2013 | (aged 72)
Alma mater | Cambridge University (B.A.; M.A.; Ph.D) |
Known for | FeFET Epitaxy JFET |
Awards | IEEE Founders Medal (1988) IRI Medal (1987) IEEE Morris N. Liebmann Memorial Award (1963) |
Ian Munro Ross
Ross was born in
In 1952 William Shockley hired him to work in semiconductors at Bell Labs, and he arrived in Murray Hill just after John Bardeen and Walter Houser Brattain had left. Shockley's group focused exclusively on transistor improvements, and Ross and G. C. Dacey were instrumental in the early stages of development of the field-effect transistor. In 1960 Ross and others invented epitaxy. He subsequently rose through managerial ranks, ultimately serving as the sixth President of Bell Labs 1979–1991 and overseeing its reorganization following the breakup of the Bell System.
In 1979, he was a resident of Rumson, New Jersey.[1]
Ross was a member of the National Academy of Engineering, National Academy of Sciences, and Royal Academy of Engineering, and a fellow of the American Association for the Advancement of Science and the Institute of Electrical and Electronics Engineers. He received the 1963 IEEE Morris N. Liebmann Memorial Award "for contributions to the development of the epitaxial transistor and other semiconductor devices", the 1987 IRI Medal from the Industrial Research Institute in recognition for his contributions to technology leadership, the 1988 IEEE Founders Medal "for distinguished leadership of AT&T Bell Laboratories guiding innovation in telecommunications and information processing", and the 2001 Bueche Award "for his contributions to semiconductor development, his leadership of engineering for communications networks and the Apollo program, and his role in shaping national policies affecting the semiconductor industry."
Selected works
- G. C. Dacey and I. M. Ross, "Unipolar field-effect transistor", Proc. IRE41, Aug. 1953, pp. 970–979.
- J. L. Moll, I. M. Ross, "The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity", Proc. IRE., vol. 44, 1956, page 72.
- G. C. Dacey and I. M. Ross, "Field Effect Transistor", Bell System Technical Journal, 34, page 1149, 1955.
References
- ^ The Daily Register, VOL.101 NO. 248, APRIL 12, 1979, http://209.212.22.88/DATA/RBR/1970-1979/1979/1979.04.12.pdf
- IEEE biography
- Public Broadcasting Service biography
- Bueche Award biography
- Brinkman, W.F.; Haggan, D.E.; Troutman, W.W., "A history of the invention of the transistor and where it will lead us", IEEE Journal of Solid-State Circuits, Volume 32, Issue 12, Dec 1997, Pages 1858–1865.
- Alcatel-Lucent biography