Indium(III) oxide
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Other names
indium trioxide, indium sesquioxide
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Identifiers | |
3D model (
JSmol ) |
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ChemSpider | |
ECHA InfoCard
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100.013.813 |
EC Number |
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PubChem CID
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UNII | |
CompTox Dashboard (EPA)
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Properties | |
In2O3 | |
Molar mass | 277.64 g/mol |
Appearance | yellowish green odorless crystals |
Density | 7.179 g/cm3 |
Melting point | 1,910 °C (3,470 °F; 2,180 K) |
insoluble | |
Band gap | ~3 eV (300 K) |
−56.0·10−6 cm3/mol | |
Structure | |
Cubic, (Bixbyite) cI80 | |
Ia3, No. 206 | |
a = 1.0117(1) nm[1]
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Formula units (Z)
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16 formula per cell |
Hazards | |
GHS labelling:[2] | |
Danger | |
H315, H319, H335 | |
P260, P261, P264, P270, P271, P280, P302+P352, P304+P340, P305+P351+P338, P312, P314, P321, P332+P313, P337+P313, P362, P403+P233, P405, P501 | |
NFPA 704 (fire diamond) | |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Indium(III) oxide (
.Physical properties
Crystal structure
Amorphous indium oxide is insoluble in water but soluble in acids, whereas crystalline indium oxide is insoluble in both water and acids. The crystalline form exists in two phases, the cubic (bixbyite type)[1] and rhombohedral (corundum type). Both phases have a band gap of about 3 eV.[3][4] The parameters of the cubic phase are listed in the infobox.
The rhombohedral phase is produced at high temperatures and pressures or when using non-equilibrium growth methods.[5] It has a space group R3c No. 167, Pearson symbol hR30, a = 0.5487 nm, b = 0.5487 nm, c = 1.4510 nm, Z = 6 and calculated density 7.31 g/cm3.[6]
Conductivity and magnetism
Thin films of chromium-doped indium oxide (In2−xCrxO3) are a magnetic semiconductor displaying high-temperature ferromagnetism, single-phase crystal structure, and semiconductor behavior with high concentration of charge carriers. It has possible applications in spintronics as a material for spin injectors.[7]
Thin polycrystalline films of indium oxide doped with Zn2+ are highly conductive (conductivity ~105 S/m) and even superconductive at liquid helium temperatures. The superconducting transition temperature Tc depends on the doping and film structure and is below 3.3 K.[8]
Synthesis
Bulk samples can be prepared by heating indium(III) hydroxide or the nitrate, carbonate or sulfate.[9] Thin films of indium oxide can be prepared by
Indium oxide can serve as a
Reactions
When heated to 700 °C, indium(III) oxide forms In2O, (called indium(I) oxide or indium suboxide), at 2000 °C it decomposes.[9] It is soluble in acids but not in alkali.[9] With ammonia at high temperature indium nitride is formed:[14]
- In2O3 + 2 NH3 → 2 InN + 3 H2O
With K2O and indium metal the compound K5InO4 containing tetrahedral InO45− ions was prepared.[15] Reacting with a range of metal trioxides produces perovskites[16] for example:
- In2O3 + Cr2O3 → 2InCrO3
Applications
Indium oxide is used in some types of batteries,
In semiconductors, indium oxide can be used as an
In
See also
References
- ^ .
- ^ "Indium oxide". pubchem.ncbi.nlm.nih.gov.
- PMID 18518246. Archived from the original(PDF) on 2017-12-15. Retrieved 2016-11-25.
- S2CID 53118924. Archived from the original(PDF) on 2019-12-31.
- ISBN 978-1-118-06215-9. Retrieved 23 September 2011.
- .
- .
- PMID 27878025.
- ^ ISBN 0-7514-0103-X.
- doi:10.1063/1.100541.)
{{cite journal}}
: CS1 maint: multiple names: authors list (link - S2CID 5176429.
- ^ "Applying Indium Oxide Nanowires as Sensitive and Specific Redox Protein Sensors". Foresight Nanotech Institute. Archived from the original on 2008-08-08. Retrieved 2008-10-29.
- ^ Feng, Tom and Ghosh, Amal K. (1984) "Method for forming indium oxide/n-silicon heterojunction solar cells" U.S. patent 4,436,765
- ISBN 0123526515
- .
- ISSN 0020-1669.
- ^ "In2O3 (Indium Oxide)". CeramicMaterials.info. Archived from the original on 2008-06-30. Retrieved 2008-10-29.