List of semiconductor scale examples
Semiconductor device fabrication |
---|
MOSFET scaling (process nodes) |
Future
|
Listed are many
semiconductor manufacturing process
nodes.
Timeline of MOSFET demonstrations
PMOS and NMOS
Date | Channel length | Oxide thickness[1] | MOSFET logic | Researcher(s) | Organization | Ref |
---|---|---|---|---|---|---|
June 1960 | 20,000 nm
|
100 nm
|
PMOS | Mohamed M. Atalla, Dawon Kahng | Bell Telephone Laboratories
|
[2][3] |
NMOS | ||||||
10,000 nm
|
100 nm | PMOS | Mohamed M. Atalla, Dawon Kahng | Bell Telephone Laboratories | [4] | |
NMOS | ||||||
May 1965 | 8,000 nm | 150 nm
|
NMOS | Chih-Tang Sah, Otto Leistiko, A.S. Grove | Fairchild Semiconductor | [5] |
5,000 nm | 170 nm
|
PMOS | ||||
December 1972 | 1,000 nm | ? | PMOS | Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu | IBM T.J. Watson Research Center
|
[6][7][8] |
1973 | 7,500 nm | ? | NMOS | Sohichi Suzuki | NEC | [9][10] |
6,000 nm | ? | PMOS | ? | Toshiba | [11][12] | |
October 1974 | 1,000 nm | 35 nm
|
NMOS | Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu | IBM T.J. Watson Research Center | [13] |
500 nm | ||||||
September 1975 | 1,500 nm | 20 nm
|
NMOS | Ryoichi Hori, Hiroo Masuda, Osamu Minato | Hitachi | [7][14] |
March 1976 | 3,000 nm | ? | NMOS | ? | Intel | [15] |
April 1979 | 1,000 nm | 25 nm | NMOS | William R. Hunter, L. M. Ephrath, Alice Cramer | IBM T.J. Watson Research Center | [16] |
December 1984 | 100 nm
|
5 nm
|
NMOS | Toshio Kobayashi, Seiji Horiguchi, K. Kiuchi | Nippon Telegraph and Telephone | [17] |
December 1985 | 150 nm
|
2.5 nm
|
NMOS | Toshio Kobayashi, Seiji Horiguchi, M. Miyake, M. Oda | Nippon Telegraph and Telephone | [18] |
75 nm
|
? | NMOS | Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis | MIT
|
[19] | |
January 1986 | 60 nm
|
? | NMOS | Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis | MIT | [20] |
June 1987 | 200 nm | 3.5 nm | PMOS | Toshio Kobayashi, M. Miyake, K. Deguchi | Nippon Telegraph and Telephone | [21] |
December 1993 | 40 nm | ? | NMOS | Mizuki Ono, Masanobu Saito, Takashi Yoshitomi | Toshiba | [22] |
September 1996 | 16 nm | ? | PMOS | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC | [23] |
June 1998 | 50 nm
|
1.3 nm | NMOS | Khaled Z. Ahmed, Effiong E. Ibok, Miryeong Song | Advanced Micro Devices (AMD)
|
[24][25] |
December 2002 | 6 nm | ? | PMOS | Bruce Doris, Omer Dokumaci, Meikei Ieong | IBM | [26][27][28] |
December 2003 | 3 nm | ? | PMOS | Hitoshi Wakabayashi, Shigeharu Yamagami | NEC | [29][27] |
? | NMOS |
CMOS (single-gate)
Date | Channel length | Oxide thickness[1] | Researcher(s) | Organization | Ref |
---|---|---|---|---|---|
February 1963 | ? | ? | Chih-Tang Sah, Frank Wanlass | Fairchild Semiconductor | [30][31] |
1968 | 20,000 nm | 100 nm
|
? | RCA Laboratories
|
[32] |
1970 | 10,000 nm
|
100 nm | ? | RCA Laboratories | [32] |
December 1976 | 2,000 nm | ? | A. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. White | Mitel Semiconductor | [33] |
February 1978 | 3,000 nm | ? | Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio Sakai | Hitachi Central Research Laboratory | [34][35][36] |
February 1983 | 1,200 nm | 25 nm
|
R.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. Pelley | Intel | [37][38] |
900 nm | 15 nm | Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima | Nippon Telegraph and Telephone (NTT) | [37][39] | |
December 1983 | 1,000 nm | 22.5 nm | G.J. Hu, Yuan Taur, Robert H. Dennard, Chung-Yu Ting | IBM T.J. Watson Research Center
|
[40] |
February 1987 | 800 nm
|
17 nm | T. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige Hirano | Matsushita | [37][41] |
700 nm | 12 nm | Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima | Nippon Telegraph and Telephone (NTT) | [37][42] | |
September 1987 | 500 nm | 12.5 nm
|
Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad | IBM T.J. Watson Research Center | [43] |
December 1987 | 250 nm
|
? | Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima | NEC | [44] |
February 1988 | 400 nm | 10 nm
|
M. Inoue, H. Kotani, T. Yamada, Hiroyuki Yamauchi | Matsushita | [37][45] |
December 1990 | 100 nm
|
? | Ghavam G. Shahidi, Bijan Davari , Yuan Taur, James D. Warnock
|
IBM T.J. Watson Research Center | [46] |
1993 | 350 nm
|
? | ? | Sony | [47] |
1996 | 150 nm
|
? | ? | Mitsubishi Electric | |
1998 | 180 nm
|
? | ? | TSMC | [48] |
December 2003 | 5 nm
|
? | Hitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki Ikezawa | NEC | [29][49] |
Multi-gate MOSFET (MuGFET)
Date | Channel length | MuGFET type | Researcher(s) | Organization | Ref |
---|---|---|---|---|---|
August 1984 | ? | DGMOS
|
Toshihiro Sekigawa, Yutaka Hayashi | Electrotechnical Laboratory (ETL)
|
[50] |
1987 | 2,000 nm | DGMOS | Toshihiro Sekigawa | Electrotechnical Laboratory (ETL) | [51] |
December 1988 | 250 nm
|
DGMOS | Bijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. Oh | IBM T.J. Watson Research Center
|
[52][53] |
180 nm
| |||||
? | GAAFET
|
Fujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. Okabe | Toshiba | [54][55][56] | |
December 1989 | 200 nm
|
FinFET
|
Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda | Hitachi Central Research Laboratory | [57][58][59] |
December 1998 | 17 nm | FinFET | Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor | University of California (Berkeley)
|
[60][61] |
2001 | 15 nm | FinFET | Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu | University of California (Berkeley) | [60][62] |
December 2002 | 10 nm | FinFET | Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor | University of California (Berkeley) | [60][63] |
June 2006 | 3 nm | GAAFET | Hyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan Ryu | KAIST | [64][65] |
Other types of MOSFET
Date | Channel length (nm) |
Oxide thickness (nm)[1] |
MOSFET type |
Researcher(s) | Organization | Ref |
---|---|---|---|---|---|---|
October 1962 | ? | ? | TFT | Paul K. Weimer | RCA Laboratories
|
[66][67] |
1965 | ? | ? | GaAs
|
H. Becke, R. Hall, J. White | RCA Laboratories | [68] |
October 1966 | 100,000 | 100
|
TFT | T.P. Brody, H.E. Kunig | Westinghouse Electric
|
[69][70] |
August 1967 | ? | ? | FGMOS
|
Simon Min Sze
|
Bell Telephone Laboratories
|
[71] |
October 1967 | ? | ? | MNOS | H.A. Richard Wegener, A.J. Lincoln, H.C. Pao | Sperry Corporation | [72] |
July 1968 | ? | ? | BiMOS
|
Hung-Chang Lin, Ramachandra R. Iyer | Westinghouse Electric
|
[73][74] |
October 1968 | ? | ? | BiCMOS | Hung-Chang Lin, Ramachandra R. Iyer, C.T. Ho | Westinghouse Electric | [75][74] |
1969 | ? | ? | VMOS | ? | Hitachi | [76][77] |
September 1969 | ? | ? | DMOS
|
Y. Tarui, Y. Hayashi, Toshihiro Sekigawa | Electrotechnical Laboratory (ETL)
|
[78][79] |
October 1970 | ? | ? | ISFET | Piet Bergveld | University of Twente | [80][81] |
October 1970 | 1000 | ? | DMOS | Y. Tarui, Y. Hayashi, Toshihiro Sekigawa | Electrotechnical Laboratory (ETL) | [82] |
1977 | ? | ? | VDMOS
|
John Louis Moll
|
HP Labs | [76] |
? | ? | LDMOS | ? | Hitachi | [83] | |
July 1979 | ? | ? | IGBT
|
Bantval Jayant Baliga , Margaret Lazeri
|
General Electric | [84] |
December 1984 | 2000 | ? | BiCMOS | H. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. Nishio | Hitachi | [85] |
May 1985 | 300
|
? | ? | K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. Namatsu | Nippon Telegraph and Telephone | [86] |
February 1985 | 1000 | ? | BiCMOS | H. Momose, Hideki Shibata, S. Saitoh, Jun-ichi Miyamoto | Toshiba | [87] |
November 1986 | 90 | 8.3
|
? | Han-Sheng Lee, L.C. Puzio | General Motors | [88] |
December 1986 | 60
|
? | ? | Ghavam G. Shahidi , Dimitri A. Antoniadis, Henry I. Smith
|
MIT
|
[89][20] |
May 1987 | ? | 10 | ? | Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. Basavaiah | IBM T.J. Watson Research Center
|
[90] |
December 1987 | 800
|
? | BiCMOS | Robert H. Havemann, R. E. Eklund, Hiep V. Tran | Texas Instruments | [91] |
June 1997 | 30
|
? | EJ-MOSFET | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC | [92] |
1998 | 32
|
? | ? | ? | NEC | [27] |
1999 | 8 | ? | ? | ? | ||
April 2000 | 8 | ? | EJ-MOSFET | Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba | NEC | [93] |
Commercial products using micro-scale MOSFETs
Products featuring 20 μm manufacturing process
- CD4000 series of integrated circuits (ICs) beginning in 1968.[32]
Products featuring 10 μm manufacturing process
- CPU, launched in 1971.
- Intel 8008 CPU launched in 1972.
- MOS Technology 6502 1 MHz CPU launched in 1975 (8 μm).
Products featuring 8 μm manufacturing process
- Intel 1103, an early dynamic random-access memory (DRAM) chip launched in 1970.[94]
Products featuring 6 μm manufacturing process
- Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973.[11]
- CPU launched in 1974 was manufactured using this process.[95]
- The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977.[96]
- MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982 (5 μm).[96]
Products featuring 3 μm manufacturing process
- Intel 8085 CPU launched in 1976.[97]
- Intel 8086 CPU launched in 1978.[95]
- Intel 8088 CPU launched in 1979.
- Motorola 68000 8 MHz CPU launched in 1979 (3.5 μm).
Products featuring 1.5 μm manufacturing process
- CPUlaunched in 1982.
- The Amiga Advanced Graphics Architecture (initially sold in 1992) included chips such as Denise that were manufactured using a 1.5 μm CMOS process.[98]
Products featuring 1 μm manufacturing process
- kb chip in 1979 and 256 kb chip in 1980.[37]
- Mb DRAM memory chip in 1984.[47]
- Intel 80386CPU launched in 1985.
Products featuring 800 nm manufacturing process
- NTT's 1 Mb DRAM memory chip in 1984.[37]
- NEC and Toshiba used this process for their 4 Mb DRAM memory chips in 1986.[47]
- Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4 Mb DRAM memory chips in 1987.[37]
- Toshiba's 4 Mb EPROM memory chip in 1987.[47]
- Hitachi, Mitsubishi and Toshiba used this process for their 1 Mb SRAM memory chips in 1987.[47]
- CPUlaunched in 1989.
- microSPARC I launched in 1992.
- First Intel P5 PentiumCPUs at 60 MHz and 66 MHz launched in 1993.
Products featuring 600 nm manufacturing process
- Mitsubishi Electric, Toshiba and NEC introduced 16 Mb DRAM memory chips manufactured with a 600 nm process in 1989.[47]
- NEC's 16 Mb EPROM memory chip in 1990.[47]
- Mitsubishi's 16 Mb flash memory chip in 1991.[47]
- CPUlaunched in 1994.
- PowerPC 601, the first PowerPC chip, was produced in 0.6 μm.
- Intel PentiumCPUs at 75 MHz, 90 MHz and 100 MHz.
Products featuring 350 nm manufacturing process
- Sony's 16 Mb SRAM memory chip in 1994.[47]
- NEC VR4300 (1995), used in the Nintendo 64game console.
- Klamath, 1997).
- (Model 6, 1997) CPUs.
- Parallax Propeller, 8 core microcontroller.[99]
Products featuring 250 nm manufacturing process
- Hitachi's 16 Mb SRAM memory chip in 1993.[47]
- Hitachi and NEC introduced 256 Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994.[47]
- NEC's 1 Gb DRAM memory chip in 1995.[47]
- Hitachi's 128 Mb NAND flash memory chip in 1996.[47]
- DEC Alpha 21264A, which was made commercially available in 1999.
- AMD K6-2 Chomper and Chomper Extended. Chomper was released on May 28, 1998.
- AMD K6-III "Sharptooth" used 250 nm.
- Mobile Tillamook, released in August 1997.
- Deschutes.
- Hitachi SH-4 CPU and PowerVR2GPU, released in 1998.
- Katmai.
- Initial PlayStation 2's Emotion Engine CPU.
Processors using 180 nm manufacturing technology
- Intel Coppermine E- October 1999
- Sony Graphics Synthesizer – March 2000[100]
- Radeon 7000– 2000
- Athlon Thunderbird– June 2000
- Intel Celeron (Willamette) – May 2002
- Motorola PowerPC 7445 and 7455 (Apollo 6) – January 2002
Processors using 130 nm manufacturing technology
- Fujitsu SPARC64 V – 2001[101]
- console) – 2001
- Motorola PowerPC 7447 and 7457 – 2002
- IBM PowerPC G5 970– October 2002 – June 2003
- Intel Coppermine– 2001-04
- Intel Tualatin-256 – 2001-10-02
- Intel Banias– 2003-03-12
- Intel Pentium 4 Northwood- 2002-01-07
- Intel Celeron Northwood-128 – 2002-09-18
- Intel Xeon Prestonia and Gallatin – 2002-02-25
- VIA C3 – 2001
- AMD Athlon XPThoroughbred, Thorton, and Barton
- AMD Athlon MP Thoroughbred – 2002-08-27
- AMD Athlon XP-M Thoroughbred, Barton, and Dublin
- AMD Duron Applebred – 2003-08-21
- AMD K7 Sempron Thoroughbred-B, Thorton, and Barton – 2004-07-28
- AMD K8 Sempron Paris – 2004-07-28
- AMD Athlon 64 Clawhammer and Newcastle – 2003-09-23
- AMD Opteron Sledgehammer – 2003-06-30
- Elbrus 2000 1891ВМ4Я (1891VM4YA) – 2008-04-27 [1]
- MCST-R500S 1891BM3 – 2008-07-27 [2]
- Vortex 86SX – [3]
Commercial products using nano-scale MOSFETs
Chips using 90 nm manufacturing technology
- Sony–Toshiba Emotion Engine+Graphics Synthesizer (PlayStation 2) – 2003[100]
- IBM PowerPC G5 970FX– 2004
- 90 nm DDR2 SDRAM process– 2005
- IBM PowerPC G5 970MP– 2005
- IBM PowerPC G5 970GX– 2005
- IBM Waternoose Xbox 360 Processor – 2005
- IBM–Sony–Toshiba Cell processor– 2005
- Intel Pentium 4 Prescott – 2004-02
- Intel Celeron D Prescott-256 – 2004-05
- Intel Dothan– 2004-05
- Intel Dothan-1024 – 2004-08
- Intel Xeon Nocona, Irwindale, Cranford, Potomac, Paxville – 2004-06
- Intel Pentium D Smithfield – 2005-05
- AMD Athlon 64 Winchester, Venice, San Diego, Orleans – 2004-10
- AMD Athlon 64 X2 Manchester, Toledo, Windsor – 2005-05
- AMD Sempron Palermo and Manila – 2004-08
- AMD Turion 64Lancaster and Richmond – 2005-03
- AMD Turion 64 X2Taylor and Trinidad – 2006-05
- AMD Opteron Venus, Troy, and Athens – 2005-08
- AMD Dual-core Opteron Denmark, Italy, Egypt, Santa Ana, and Santa Rosa
- VIA C7 – 2005-05
- Loongson (Godson) 2Е STLS2E02 – 2007-04
- Loongson (Godson) 2F STLS2F02 – 2008-07
- MCST-4R– 2010-12
- Elbrus-2C+– 2011-11
Processors using 65 nm manufacturing technology
- Sony–Toshiba PStwo)[102]– 2005
- Intel Pentium 4 (Cedar Mill) – 2006-01-16
- Intel Pentium D 900-series – 2006-01-16
- Intel Celeron D(Cedar Mill cores) – 2006-05-28
- Intel Core – 2006-01-05
- Intel Core 2 – 2006-07-27
- Intel Sossaman) – 2006-03-14
- AMD Athlon 64 series (starting from Lima) – 2007-02-20
- AMD Turion 64 X2series (starting from Tyler) – 2007-05-07
- AMD Phenomseries
- IBM's Cell Processor – PlayStation 3– 2007-11-17
- IBM's z10
- Microsoft Xbox 360 "Falcon" CPU – 2007–09
- Microsoft Xbox 360 "Opus" CPU – 2008
- Microsoft Xbox 360 "Jasper" CPU – 2008–10
- Microsoft Xbox 360 "Jasper" GPU – 2008–10
- Sun UltraSPARC T2 – 2007–10
- AMD Turion Ultra – 2008-06[103]
- TI OMAP 3 Family[104]– 2008-02
- VIA Nano – 2008-05
- Loongson – 2009
- 8800GTGPU – 2007
Processors using 45 nm technology
- Matsushita released the 45 nm Uniphier in 2007.[105]
- Core 2brand.
- )
- Pentium Dual-Core Wolfdale-3M are current[when?] Intel mainstream dual core sold under the Pentium brand.
- Diamondville, Pineview are current[when?] Intel cores with hyper-threading sold under the Intel Atom brand.
- ) mobile dual core processors.
- AMD (Phenom II) "Thuban" Six-Core Processor (1055T)
- Xenon in the Xbox 360 S model.
- Sony–Toshiba Cell Broadband Engine in PlayStation 3 Slimmodel – September 2009.
- Samsung S5PC110, as known as Hummingbird.
- Texas Instruments OMAP 36xx.
- IBM POWER7 and z196
- SPARC64 VIIIfxseries
- Espresso (microprocessor) Wii UCPU
Chips using 32 nm technology
- NAND flash memory chips with the 32 nm process in 2009.[106]
- Intel Core i3 and i5 processors, released in January 2010[107]
- Intel 6-core processor, codenamed Gulftown[108]
- Intel i7-970, was released in late July 2010, priced at approximately US$900
- AMD FX Series processors, codenamed Zambezi and based on AMD's Bulldozer architecture, were released in October 2011. The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design.
- 1080p60 high-definition video capabilities in September 2011[109]
Chips using 24–28 nm technology
- SK Hynix announced that it could produce a 26 nm flash chip with 64 Gb capacity; Intel Corp. and Micron Technology had by then already developed the technology themselves. Announced in 2010.[110]
- Toshiba announced that it was shipping 24 nm flash memory NAND devices on August 31, 2010.[111]
- In 2016 MCST's 28 nm processor Elbrus-8S went for serial production.[112][113]
Chips using 22 nm technology
- Intel Core i7 and Intel Core i5 processors based on Intel's Ivy Bridge 22 nm technology for series 7 chip-sets went on sale worldwide on April 23, 2012.[114]
Chips using 20 nm technology
- NAND flash memory chips using a 20 nm process in 2010.[115]
- Nvidia Tegra X1 (Nintendo Switch and Nvidia Shield TV)
Chips using 16 nm technology
- FinFET chip production in 2013.[116]
- Nvidia Tegra X1+ (later Nintendo Switch and Nvidia Shield TV models)
Chips using 14 nm technology
- Intel Core i7 and Intel Core i5 processors based on Intel's Broadwell 14 nm technology was launched in January 2015.[117]
- FinFET technology.[118]
Chips using 10 nm technology
- Samsung announced that it had begun mass production of multi-level cell (MLC) flash memory chips using a 10 nm process in 2013.[119] On 17 October 2016, Samsung Electronics announced mass production of SoC chips at 10 nm.[120]
- TSMC began commercial production of 10 nm chips in early 2016, before moving onto mass production in early 2017.[121]
- Samsung began shipping Galaxy S8 smartphone in April 2017 using the company's 10 nm processor.[122]
- Apple delivered second-generation iPad Pro tablets powered with TSMC-produced Apple A10X chips using the 10 nm FinFET process in June 2017.[123]
Chips using 7 nm technology
- TSMC began risk production of 256 Mbit SRAM memory chips using a 7 nm process in April 2017.[124]
- Samsung and TSMC began mass production of 7 nm devices in 2018.[125]
- Apple A12 and Huawei Kirin 980 mobile processors, both released in 2018, use 7 nm chips manufactured by TSMC.[126]
- AMD began using TSMC 7 nm starting with the Vega 20 GPU in November 2018,[127] with Zen 2-based CPUs and APUs from July 2019,[128] and for both PlayStation 5 [129] and Xbox Series X/S [130] consoles' APUs, released both in November 2020.
Chips using 5 nm technology
- Samsung began production of 5 nm chips (5LPE) in late 2018.[131]
- TSMC began production of 5 nm chips (CLN5FF) in April 2019.[132]
Chips using 3 nm technology
- TSMC have announced plans to release 3 nm devices during 2021–2022.[133][134]
- Samsung Electronics have begun risk production of 3 nm GAAFET transistors in June of 2022.[135]
- Apple A17 Pro (iPhone 15 Pro)
See also
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The i1103 was manufactured on a 6-mask silicon-gate P-MOS process with 8 μm minimum features. The resulting product had a 2,400 μm, 2 memory cell size, a die size just under 10 mm2, and sold for around $21.
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