Thin-film transistor
A thin-film transistor (TFT) is a special type of
Design and manufacture
TFTs can be fabricated with a wide variety of semiconductor materials. Because it is naturally abundant and well understood, amorphous or polycrystalline silicon were (and still are) used as the semiconductor layer. However, because of the low mobility of amorphous silicon[2] and the large device-to-device variations found in polycrystalline silicon,[3][4][5] other materials have been studied for use in TFTs. These include cadmium selenide,[6][7] metal oxides such as indium gallium zinc oxide (IGZO) or zinc oxide,[8] organic semiconductors,[9] carbon nanotubes,[10] or metal halide perovskites.[11]
Because TFTs are grown on inert substrates, rather than on wafers, the semiconductor must be deposited in a dedicated process. A variety of techniques are used to deposit semiconductors in TFTs. These include chemical vapor deposition (CVD), atomic layer deposition (ALD), and sputtering. The semiconductor can also be deposited from solution,[12] via techniques such as printing[13] or spray coating.[14] Solution-based techniques are hoped to lead to low-cost, mechanically flexible electronics.[15] Because typical substrates will deform or melt at high temperatures, the deposition process must be carried out under relatively low temperatures compared to traditional electronic material processing.[16]
Some wide band gap semiconductors, most notable metal oxides, are optically transparent. which may lead to applications such as magazines and journal pages with moving images.
Many AMOLED displays use LTPO TFT transistors. These transistors offer stability at low refresh rates, and variable refresh rates, which allows for power saving displays that do not show visual artifacts.[22][23][24] Large OLED displays usually use AOS (amporphous oxide semiconductor) TFT transistors instead, also called oxide TFTs[25] and these are usually based on IGZO.[26]
Applications
The best known application of thin-film transistors is in TFT LCDs, an implementation of liquid-crystal display technology. Transistors are embedded within the panel itself, reducing crosstalk between pixels and improving image stability.
As of 2008[update], many color
As of 2013[update], all modern
The most beneficial aspect of TFT technology is its use of a separate transistor for each pixel on the display. Because each transistor is small, the amount of charge needed to control it is also small. This allows for very fast re-drawing of the display.
Structure of a TFT-display matrix
This picture does not include the actual light-source (usually
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History
In February 1957,
The idea of a TFT-based
A breakthrough in TFT research came with the development of the amorphous silicon (a-Si) TFT by P.G. le Comber, W.E. Spear and A. Ghaith at the University of Dundee in 1979. They reported the first functional TFT made from hydrogenated a-Si with a silicon nitride gate dielectric layer.[31][38] The a-Si TFT was soon recognized as being more suitable for a large-area AM LCD.[31] This led to commercial research and development (R&D) of AM LCD panels based on a-Si TFTs in Japan.[39]
By 1982,
The first commercial TFT-based AM LCD product was the 2.1-inch
TFTs can also be made out of indium gallium zinc oxide (
See also
References
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