Harold M. Manasevit

Dr. Harold M. Manasevit (1927–2008) was an

materials scientist

.

Manasevit received a B.S. Degree in

Inorganic Chemistry from the Illinois Institute of Technology in 1959. He then joined the U.S. Borax Research Corp. in Anaheim, California, but in 1960 left for the North American Aviation Company. In 1983 he joined TRW

as a Senior Scientist.

Manasevit's career has focused on

superconducting

films on insulators.

Manesevit holds 16 patents, and was awarded the 1985 IEEE Morris N. Liebmann Memorial Award "for pioneering work in metalorganic chemical vapor deposition, epitaxial-crystal reactor design, and demonstration of superior quality semiconductor devices grown by this process."

Stated by Russell D. Dupuis, "In the mid-1970s, Rockwell International Electronics Operations (Anaheim CA) was developing the guidance systems for Minuteman missiles. It was necessary to design a system with radiation-hardened circuits so the missiles could go through these nuclear bomb clouds. One key feature of these circuits was the need for stability in the conductivity of the substrate. Silicon was the technology of choice, but it suffered when exposed to large amounts of radiation. My colleague, Harold Manasevit had the idea of growing silicon on a sapphire substrate, which was an insulator from radiation and infinitely stable. So he developed a technology called silicon on sapphire, or SOS, which was used in the Minuteman Missiles. He also developed an analogous process for the growth of gallium arsenide on sapphire."^[2] ---BN

References

^ 1
^ 2

Robert S. Feigelson (ed), 50 Years Progress in Crystal Growth: A Reprint Collection, Elsevier, 2004, page xxviii.
ISBN 0-444-51650-6
.

Smithsonian MIND Repository entry

1 Material Identity Number: J010-1971-011; H. M. Manasevit, et al., J. Electrochem. Soc. Vol. 118, No. 11, pp-1864-1867 (1971). 2 [1]

[1] 1

[2] 2

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