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|wikt=diamond |commons=Diamond |b=no |n=no |q=Diamond |s=no |v=no}} * [http://www.ioffe.ru/SVA/NSM/Semicond/Diamond/index.html Properties of diamond: Ioffe database]...139 KB (14,961 words) - 12:57, 24 May 2024- htm |url-status=dead }}</ref><ref>{{cite web |url=http://www.ioffe.ru/SVA/NSM/Semicond/Ge/bandstr.html |title=Band strcutre and carrier concentration...46 KB (5,377 words) - 04:54, 29 April 2024
properties of Silicon (Si)|url=https://www.ioffe.ru/SVA/NSM/Semicond/Si/|access-date=2021-06-08|website=www.ioffe.ru}} * {{cite AV media |url=https://www.youtube...85 KB (10,611 words) - 10:15, 3 June 2024
Properties of major SiC polytypes<ref name=ioffe>{{cite web| url = http://www.ioffe.ru/SVA/NSM/Semicond/SiC/| title = Properties of Silicon Carbide (SiC)| publisher...67 KB (7,292 words) - 14:45, 1 June 2024
Case Studies in Environmental Medicine: Arsenic Toxicity] * [http://www.ioffe.ru/SVA/NSM/Semicond/GaAs/index.html Physical properties of gallium arsenide...46 KB (5,183 words) - 09:13, 2 May 2024- index|[100], [111], and [110]]], respectively.<ref>{{Cite web | url=http://www.ioffe.ru/SVA/NSM/Semicond/AlGaAs/bandstr.html | title=NSM Archive - Aluminium Gallium...36 KB (4,771 words) - 11:14, 16 May 2024
978-9056992286}}</ref> ! rowspan=2 | Diamond<ref name=ioffe>{{cite web | url = http://www.ioffe.ru/SVA/NSM/Semicond/BN/index.html | title = BN – Boron Nitride | work = Ioffe...71 KB (7,510 words) - 04:44, 10 June 2024- name=ioffe>{{cite web|url=http://www.ioffe.ru/SVA/NSM/Semicond/|title=NSM Archive - Physical Properties of Semiconductors|website=www.ioffe.ru|access-date=2010-07-1...54 KB (2,516 words) - 20:23, 15 May 2024
5.8687 Å <ref>{{cite web|title=Basic Parameters of InP|url=http://www.ioffe.ru/SVA/NSM/Semicond/InP/basic.html|publisher=Ioffe Institute, Russia}}</ref>...10 KB (754 words) - 16:21, 4 June 2024- Sciences, Chief Researcher\Honorary Fellow<ref>{{Cite web |url=http://www.ioffe.ru/sol/dyakonov.html|title=Школа-семинар 'Спиновая физика полупроводников'...8 KB (677 words) - 01:05, 28 May 2024
Bury St Edwards. {{ISBN|0-7198-0291-1}} ==External links== *[http://www.ioffe.ru/SVA/NSM/Semicond/Diamond/index.html Properties of diamond] *[https://www...49 KB (5,525 words) - 16:29, 30 April 2024
BandGap = 2.12 eV (indirect)<ref name=ioffe>{{cite web | url = http://www.ioffe.ru/SVA/NSM/Semicond/AlGaAs/index.html | work = Ioffe Database | title =...8 KB (691 words) - 04:16, 21 April 2024
<ref name=ioffe>[http://www.ioffe.ru/SVA/NSM/Semicond/InSb/index.html Properties of Indium Antimonide (InSb)]. ioffe.ru</ref> ===Electronic properties===...12 KB (993 words) - 09:21, 2 May 2024
|formation = {{start date and age|1918}}<ref>{{Cite web|url=http://www.ioffe.ru/index_en.html|title=Welcome to the Ioffe Institute...12 KB (1,274 words) - 09:38, 30 January 2024
2011 | volume = 53 | issue = 2 | pages = 320–322 | url = http://journals.ioffe.ru/ftt/2011/02/p299-301.pdf | bibcode = 2011PhSS...53..320G | doi = 10...49 KB (5,642 words) - 20:27, 20 April 2024
==References== {{reflist}} ==External links== *{{cite web|url=http://www.ioffe.ru/SVA/NSM/Semicond/InN/|title=InN – Indium nitride|author=<!--Not stated-->|date=n...8 KB (670 words) - 18:27, 8 July 2023
ll_gold_flex_Product_information_sheet.pdf] * [[Aramid]] * [http://www.ioffe.ru/SVA/NSM/ Ioffe Institute Databases] * [https://web.archive...6 KB (519 words) - 05:40, 16 September 2023
ioffe.ru/ioffe.html Short biography by the Russian Ioffe institute] {{Webarchive|url=https://web.archive.org/web/20190614191652/http://www.ioffe.ru/ioffe...9 KB (778 words) - 23:12, 5 May 2024
6H form)|| 589.29||2.65||<ref name=ioffe>{{cite web| url = http://www.ioffe.ru/SVA/NSM/Semicond/SiC/optic.html| title = Silicon Carbide (SiC) - Optical...17 KB (1,092 words) - 18:37, 21 March 2024
==References== {{reflist}} ==External links== * {{ cite web | url = http://www.ioffe.ru/SVA/NSM/Semicond/AlGaAs/index.html | work = Ioffe Database | title =...3 KB (299 words) - 09:19, 2 May 2024
- Salt *I = Indirect *D = Direct *At ~ 2K Some data from <ref>http://www.ioffe.ru/SVA/NSM/Semicond/index.html</ref> ==Electronic Semiconductor Properties