Ghavam Shahidi

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Ghavam G. Shahidi (born 1959) is an

complementary metal–oxide–semiconductor
(CMOS) technology since the late 1980s.

Career

He studied electrical engineering at

MIT, where he wrote a PhD thesis on "velocity overshoot in deeply scaled MOSFETs
" (metal–oxide–semiconductor field-effect transistors), under supervision of Professor Dimitri A. Antoniadis.

A

60 nanometer silicon MOSFET (metal–oxide–semiconductor field-effect transistor) was fabricated by Shahidi with Antoniadis and Henry I. Smith at MIT in 1986.[1][2] The device was fabricated using X-ray lithography.[3]

Shahidi joined

IBM Thomas J Watson Research Center.[4] Since then, he was the chief architect of SOI technology at IBM, leading the development of high-performance CMOS and SOI technologies at IBM Microelectronics. He made fundamental contributions to SOI technology, from materials research to the development of the first commercially viable devices. He was supported by his boss Bijan Davari, who believed in the technology and supported Shahidi's team.[5]

He was a key figure in making SOI CMOS technology a manufacturable reality and enabling the continued

epitaxial overgrowth and chemical mechanical polishing to prepare device-quality SOI material for fabricating devices and simple circuits, which led to IBM expanding its research program to include SOI substrates. He was also the first to demonstrate the power-delay advantage of SOI CMOS technology over traditional bulk CMOS in microprocessor applications. He overcame barriers preventing the semiconductor industry's adoption of SOI, and was instrumental in driving SOI substrate development to the quality and cost levels suitable for mass-production.[6]

This led to the first commercial use of SOI in mainstream CMOS technology.

130 nanometer CMOS SOI devices with copper and low-κ dielectric for the back end, based on Shahidi's work.[5]

His work resulted in the qualification of multiple CMOS SOI technologies and their transfer to manufacturing; establishment of design infrastructure; and the first mainstream use of SOI. He remained with IBM Microelectronics as the director of high-performance logic development until 2003. He then moved back to IBM's Watson's Laboratory as the Director of Silicon Technology.[7]

As director of silicon technology at IBM Research, he was researching lithography technology in the early 2000s. In 2004, he announced plans for IBM to commercialize lithography based on light filtered through water, and then X-ray lithography within the next several years. He also announced that his team were investigating 20 new semiconductor materials.[7]

Shahidi received the

IBM Thomas J Watson Research Center in Yorktown Heights, New York.[6]

References

  1. S2CID 27558025
    .
  2. ISSN 0734-211X
    .
  3. doi:10.1109/16.8835
    .
  4. ^ a b c "Ghavam G. Shahidi". IEEE Xplore. Institute of Electrical and Electronics Engineers. Retrieved 16 September 2019.
  5. ^ a b c "SOI scientist counted among latest IBM fellows". EE Times. 30 May 2001.
  6. ^ a b c "Ghavam Shahidi". Engineering and Technology History. Institute of Electrical and Electronics Engineers. 26 January 2016. Retrieved 16 September 2019.
  7. ^
    Business Week. Archived from the original
    on 2011-02-21.
  8. IEEE Electron Devices Society. Institute of Electrical and Electronics Engineers
    . Retrieved 16 September 2019.
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