Shubnikov–de Haas effect

Source: Wikipedia, the free encyclopedia.

An

minority carrier
populations. The effect is named after Wander Johannes de Haas and Lev Shubnikov.

Physical process

At sufficiently low temperatures and high magnetic fields, the free electrons in the conduction band of a

sinusoidal, with the shape becoming ever more square as the temperature is lowered.[citation needed
]

Theory

Consider a two-dimensional quantum gas of electrons confined in a sample with given width and with edges. In the presence of a magnetic flux density B, the energy eigenvalues of this system are described by

Landau levels. As shown in Fig 1, these levels are equidistant along the vertical axis. Each energy level is substantially flat inside a sample (see Fig 1). At the edges of a sample, the work function
bends levels upwards.

Fig 1: Edge channels of a sample with a two-dimensional electron gas

Fig 1 shows the

Landau levels
, scattering of electrons will occur only at the edges of a sample where the levels are bent. The corresponding electron states are commonly referred to as edge channels.

The Landauer–Büttiker approach is used to describe transport of electrons in this particular sample. The Landauer–Büttiker approach allows calculation of net currents Im flowing between a number of contacts 1 ≤ mn. In its simplified form, the net current Im of contact m with chemical potential µm reads

(1)

where e denotes the

Planck's constant, and i stands for the number of edge channels.[2] The matrix Tml denotes the probability of transmission of a negatively charged particle (i.e. of an electron) from a contact lm to another contact m. The net current Im in relationship (1) is made up of the currents towards contact m and of the current transmitted from the contact m to all other contacts lm . That current equals the voltage μm / e of contact m multiplied with the Hall conductivity
of 2 e2 / h per edge channel.

Fig 2: Contact arrangement for measurement of SdH oscillations

Fig 2 shows a sample with four contacts. To drive a current through the sample, a voltage is applied between the contacts 1 and 4. A voltage is measured between the contacts 2 and 3. Suppose electrons leave the 1st contact, then are transmitted from contact 1 to contact 2, then from contact 2 to contact 3, then from contact 3 to contact 4, and finally from contact 4 back to contact 1. A negative charge (i.e. an electron) transmitted from contact 1 to contact 2 will result in a current from contact 2 to contact 1. An electron transmitted from contact 2 to contact 3 will result in a current from contact 3 to contact 2 etc. Suppose also that no electrons are transmitted along any further paths. The probabilities of transmission of ideal contacts then read

and

otherwise. With these probabilities, the currents I1 ... I4 through the four contacts, and with their chemical potentials µ1 ... µ4, equation (1) can be re-written

A voltage is measured between contacts 2 and 3. The voltage measurement should ideally not involve a flow of current through the meter, so I2 = I3 = 0. It follows that

In other words, the chemical potentials µ2 and µ3 and their respective voltages µ2/e and µ3/e are the same. As a consequence of no drop of voltage between the contacts 2 and 3, the current I1 experiences zero resistivity RSdH in between contacts 2 and 3

The result of zero resistivity between the contacts 2 and 3 is a consequence of the electrons being mobile only in the edge channels of the sample. The situation would be different if a

Landau levels are positioned such that the Fermi energy
EF is in between two levels.

Applications

Shubnikov–De Haas oscillations can be used to determine the two-dimensional electron density of a sample. For a given magnetic flux the maximum number D of electrons with spin S = 1/2 per

Landau level
is

(2)

Upon insertion of the expressions for the

flux quantum Φ0 = h / e and for the magnetic flux Φ = BA relationship (2
) reads

Let N denote the maximum number of states per unit area, so D = NA and

Now let each

Landau level
correspond to an edge channel of the above sample. For a given number i of edge channels each filled with N electrons per unit area, the overall number n of electrons per unit area will read

The overall number n of electrons per unit area is commonly referred to as the electron density of a sample. No electrons disappear from the sample into the unknown, so the electron density n is constant. It follows that

(3)
Fig 3: Inverse magnetic flux densities 1/Bi vs Shubnikov–De Haas minima as observed in highly doped Bi2Se3

For a given sample, all factors including the electron density n on the right hand side of relationship (

Planck's constant h, one can derive the electron density n of a sample from this plot.[3]
Shubnikov–De Haas oscillations are observed in highly doped Bi2Se3.[4] Fig 3 shows the reciprocal magnetic flux density 1/Bi of the 10th to 14th minima of a Bi2Se3 sample. The slope of 0.00618/T as obtained from a linear fit yields the electron density n

Shubnikov–de Haas oscillations can be used to map the Fermi surface of electrons in a sample, by determining the periods of oscillation for various applied field directions.

Related physical process

The effect is related to the

oscillations indicate areas of extremal orbits around the Fermi surface. The area of the Fermi surface is expressed in teslas
. More accurately, the period in inverse Teslas is inversely proportional to the area of the extremal orbit of the Fermi surface in inverse m/cm.

References

  1. ^ Since defects in the sample will affect the position of the Fermi energy EF, this is strictly speaking an approximation. Any influence of defects and of temperatures above 0 K is neglected here for now.
  2. ^ The number of edge channels i is closely related to the filling factor ν = 2 ∙ i. The factor 2 is due to spin degeneracy.
  3. CGS units
    , the same relationship reads
  4. PMID 23003290
    .

External links