Shubnikov–de Haas effect
An
Physical process
At sufficiently low temperatures and high magnetic fields, the free electrons in the conduction band of a
Theory
Consider a two-dimensional quantum gas of electrons confined in a sample with given width and with edges. In the presence of a magnetic flux density B, the energy eigenvalues of this system are described by
Fig 1 shows the
The Landauer–Büttiker approach is used to describe transport of electrons in this particular sample. The Landauer–Büttiker approach allows calculation of net currents Im flowing between a number of contacts 1 ≤ m ≤ n. In its simplified form, the net current Im of contact m with chemical potential µm reads
-
(1)
where e denotes the
Fig 2 shows a sample with four contacts. To drive a current through the sample, a voltage is applied between the contacts 1 and 4. A voltage is measured between the contacts 2 and 3. Suppose electrons leave the 1st contact, then are transmitted from contact 1 to contact 2, then from contact 2 to contact 3, then from contact 3 to contact 4, and finally from contact 4 back to contact 1. A negative charge (i.e. an electron) transmitted from contact 1 to contact 2 will result in a current from contact 2 to contact 1. An electron transmitted from contact 2 to contact 3 will result in a current from contact 3 to contact 2 etc. Suppose also that no electrons are transmitted along any further paths. The probabilities of transmission of ideal contacts then read
and
otherwise. With these probabilities, the currents I1 ... I4 through the four contacts, and with their chemical potentials µ1 ... µ4, equation (1) can be re-written
A voltage is measured between contacts 2 and 3. The voltage measurement should ideally not involve a flow of current through the meter, so I2 = I3 = 0. It follows that
In other words, the chemical potentials µ2 and µ3 and their respective voltages µ2/e and µ3/e are the same. As a consequence of no drop of voltage between the contacts 2 and 3, the current I1 experiences zero resistivity RSdH in between contacts 2 and 3
The result of zero resistivity between the contacts 2 and 3 is a consequence of the electrons being mobile only in the edge channels of the sample. The situation would be different if a
Applications
Shubnikov–De Haas oscillations can be used to determine the two-dimensional electron density of a sample. For a given magnetic flux the maximum number D of electrons with spin S = 1/2 per
-
(2)
Upon insertion of the expressions for the
) readsLet N denote the maximum number of states per unit area, so D = N ∙ A and
Now let each
The overall number n of electrons per unit area is commonly referred to as the electron density of a sample. No electrons disappear from the sample into the unknown, so the electron density n is constant. It follows that
-
(3)
For a given sample, all factors including the electron density n on the right hand side of relationship (
Shubnikov–de Haas oscillations can be used to map the Fermi surface of electrons in a sample, by determining the periods of oscillation for various applied field directions.
Related physical process
The effect is related to the
References
- ^ Since defects in the sample will affect the position of the Fermi energy EF, this is strictly speaking an approximation. Any influence of defects and of temperatures above 0 K is neglected here for now.
- ^ The number of edge channels i is closely related to the filling factor ν = 2 ∙ i. The factor 2 is due to spin degeneracy.
- CGS units, the same relationship reads
- PMID 23003290.
- Schubnikow, L.; De Haas, W.J. (1930). "Magnetische Widerstandsvergrösserung in Einkristallen von Wismut bei tiefen Temperaturen" [Magnetic resistance increase in single crystals of bismuth at low temperatures] (PDF). Proceedings of the Royal Netherlands Academy of Arts and Science (in German). 33: 130–133.
- Schubnikow, L.; De Haas, W.J. (1930). "Neue Erscheinungen bei der Widerstandsänderung von Wismuthkristallen im Magnetfeld bei der Temperatur von flüssigem Wasserstoff (I)" [New phenomena in the change in resistance of bismuth crystals in a magnetic field at the temperature of liquid hydrogen (I)] (PDF). Proceedings of the Royal Netherlands Academy of Arts and Science. 33: 363–378.
- Schubnikow, L.; De Haas, W.J. (1930). "Neue Erscheinungen bei der Widerstandsänderung von Wismuthkristallen im Magnetfeld bei der Temperatur von flüssigem Wasserstoff (II)" (PDF). Proceedings of the Royal Netherlands Academy of Arts and Science. 33: 418–432.
- Schubnikow, L.; De Haas, W.J. (1930). "Die Widerstandsänderung von Wismuthkristallen im Magnetfeld bei der Temperatur von flüssigem Stickstoff" [The change in resistance of bismuth crystals in a magnetic field at the temperature of liquid nitrogen] (PDF). Proceedings of the Royal Netherlands Academy of Arts and Science. 33: 433–439.
External links
- The article uses text from Shubnikov effect on Lang.gov Archived 2017-09-22 at the Wayback Machine that is a Public Domain as a work of a US government agency.
- Material behavior in strong magnetic fields Archived 2006-09-03 at the Wayback Machine