Aluminium gallium nitride
Aluminium gallium nitride (AlGaN) is a
semiconductor material. It is any alloy of aluminium nitride and gallium nitride
.
The
bandgap of AlxGa1−xN can be tailored from 3.4eV (xAl=0) to 6.2eV (xAl=1).[1]
AlGaN is used to manufacture
semiconductor lasers
.
It is also used in detectors of ultraviolet radiation, and in AlGaN/GaN High-electron-mobility transistors.
AlGaN is often used together with gallium nitride or aluminium nitride, forming heterojunctions.
AlGaN layers are commonly grown on Gallium nitride, on sapphire or (111) Si, almost always with additional GaN layers.
Safety and toxicity aspects
The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium nitride sources (such as
MOVPE sources have been reported recently in a review.[3]