Silicon–germanium

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SiGe (

thermoelectric
material for high-temperature applications (>700 K).

Production

The use of silicon–germanium as a semiconductor was championed by Bernie Meyerson.[2] The challenge that had delayed its realization for decades was that germanium atoms are roughly 4% larger than silicon atoms. At the usual high temperatures at which silicon transistors were fabricated, the strain induced by adding these larger atoms into crystalline silicon produced vast numbers of defects, precluding the resulting material being of any use. Meyerson and co-workers discovered

MOVPE deposition of Ge-containing films such as high purity Ge, SiGe, and strained silicon.[7][8]

SiGe

TSMC
also sells SiGe manufacturing capacity.

In July 2015, IBM announced that it had created working samples of transistors using a

7 nm silicon–germanium process, promising a quadrupling in the amount of transistors compared to a contemporary process.[10]

SiGe transistors

SiGe allows CMOS logic to be integrated with heterojunction bipolar transistors,[11] making it suitable for mixed-signal integrated circuits.[12] Heterojunction bipolar transistors have higher forward gain and lower reverse gain than traditional homojunction bipolar transistors. This translates into better low-current and high-frequency performance. Being a heterojunction technology with an adjustable band gap, the SiGe offers the opportunity for more flexible bandgap tuning than silicon-only technology.

Silicon–germanium on insulator (SGOI) is a technology analogous to the silicon on insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher drive currents. SiGe MOSFETs can also provide lower junction leakage due to the lower bandgap value of SiGe.[citation needed] However, a major issue with SGOI MOSFETs is the inability to form stable oxides with silicon–germanium using standard silicon oxidation processing.

Thermoelectric application

A silicon–germanium thermoelectric device MHW-RTG3 was used in the Voyager 1 and 2 spacecraft.[13] Silicon–germanium thermoelectric devices were also used in other MHW-RTGs and GPHS-RTGs aboard Cassini, Galileo, Ulysses.[14]

Light emission

By controlling the composition of a hexagonal SiGe alloy, researchers from Eindhoven University of Technology developed a material that can emit light.[15] In combination with its electronic properties, this opens up the possibility of producing a laser integrated into a single chip to enable data transfer using light instead of electric current, speeding up data transfer while reducing energy consumption and need for cooling systems. The international team, with lead authors Elham Fadaly, Alain Dijkstra and Erik Bakkers at Eindhoven University of Technology in the Netherlands and Jens Renè Suckert at Friedrich-Schiller-Universität Jena in Germany, were awarded the 2020 Breakthrough of the Year award by the magazine Physics World.[16]

See also

References

  1. ^ Ouellette, Jennifer (June/July 2002). "Silicon–Germanium Gives Semiconductors the Edge". Archived 2008-05-17 at the Wayback Machine, The Industrial Physicist.
  2. doi:10.1038/scientificamerican0394-62
    .
  3. ^ "Bistable Conditions for Low Temperature Silicon Epitaxy," Bernard S. Meyerson, Franz Himpsel and Kevin J. Uram, Appl. Phys. Lett. 57, 1034 (1990).
  4. ^ B. S. Meyerson, "UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications," in Proceedings of the IEEE, vol. 80, no. 10, pp. 1592-1608, Oct. 1992, doi: 10.1109/5.168668.
  5. ^ "75 GHz f t  SiGe Base Heterojunction Bipolar Transistor," G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbe, G.J. Scilla, E. DeFresart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame and J. Burghartz, Electron. Dev. Lett. 11, 171 (1990).
  6. ^ "SiGe HBTs Reach the Microwave and Millimeter-Wave Frontier," C. Kermarrec, T. Tewksbury, G. Dave, R. Baines, B. Meyerson, D. Harame and M. Gilbert, Proceedings of the 1994 Bipolar/BiCMOS Circuits & Technology Meeting, Minneapolis, Minn., Oct. 10-11, 1994, Sponsored by IEEE, (1994).
  7. doi:10.1016/j.jcrysgro.2005.10.094
    .
  8. doi:10.1016/j.jcrysgro.2006.10.194
    .
  9. ^ AMD And IBM Unveil New, Higher Performance, More Power Efficient 65nm Process Technologies At Gathering Of Industry's Top R&D Firms, retrieved at March 16, 2007.
  10. ^ Markoff, John (9 July 2015). "IBM Discloses Working Version of a Much Higher-Capacity Chip". The New York Times.
  11. ^ "A 200 mm SiGe HBT BiCMOS Technology for Mixed Signal Applications," K. Schonenberg, M. Gilbert, G.D. Berg, S. Wu, M. Soyuer, K. A. Tallman, K. J. Stein, R. A. Groves, S. Subbanna, D.B. Colavito, D.A. Sunderland and B.S. Meyerson," Proceedings of the 1995 Bipolar/BiCMOS Circuits and Technology Meeting, p. 89-92, 1995.
  12. ^ Cressler, J. D.; Niu, G. (2003). Silicon-Germanium Heterojunction Bipolar Transistors. Artech House. p. 13.
  13. ^ "Thermoelectrics History Timeline". Alphabet Energy. Archived from the original on 2019-08-17.
  14. ^ G. L. Bennett; J. J. Lombardo; R. J. Hemler; G. Silverman; C. W. Whitmore; W. R. Amos; E. W. Johnson; A. Schock; R. W. Zocher; T. K. Keenan; J. C. Hagan; R. W. Englehart (26–29 June 2006). Mission of Daring: The General-Purpose Heat Source Radioisotope Thermoelectric Generator (PDF). 4th International Energy Conversion Engineering Conference and Exhibit (IECEC). San Diego, California.
  15. S2CID 207870211
    .
  16. ^ Hamish Johnston (10 Dec 2020). "Physics World announces its Breakthrough of the Year finalists for 2020". Physics World.

Further reading

External links
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