Zinc telluride
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3D model (
JSmol ) |
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ECHA InfoCard
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100.013.874 |
PubChem CID
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UNII | |
CompTox Dashboard (EPA)
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Properties | |
ZnTe | |
Molar mass | 192.99 g/mol[1] |
Appearance | red crystals |
Density | 6.34 g/cm3[1] |
Melting point | 1,295 °C; 2,363 °F; 1,568 K[1] |
Band gap | 2.26 eV[2] |
Electron mobility | 340 cm2/(V·s)[2] |
Thermal conductivity
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108 mW/(cm·K)[1] |
Refractive index (nD)
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3.56[2] |
Structure | |
Zincblende (cubic)
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F43m[1] | |
a = 610.1 pm[1]
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Tetrahedral (Zn2+) Tetrahedral (Te2−)[1] | |
Thermochemistry | |
Heat capacity (C)
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264 J/(kg·K)[1] |
Related compounds | |
Other anions
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Zinc oxide Zinc sulfide Zinc selenide |
Other cations
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Cadmium telluride Mercury telluride |
Related compounds
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Cadmium zinc telluride |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Zinc telluride is a binary
Properties
ZnTe has the appearance of grey or brownish-red powder, or ruby-red crystals when refined by sublimation. Zinc telluride typically has a cubic (sphalerite, or "
thin-film solar cells. In the wurtzite (hexagonal) crystal structure, it has lattice parameters a = 0.427 and c = 0.699 nm.[5]
Applications
Optoelectronics
Zinc telluride can be easily
structures.The material can also be used as a component of ternary semiconductor compounds, such as CdxZn(1-x)Te (conceptually a mixture composed from the end-members ZnTe and CdTe), which can be made with a varying composition x to allow the optical bandgap to be tuned as desired.
Nonlinear optics
Zinc telluride together with
terahertz imaging. When a crystal of such material is subjected to a high-intensity light pulse of subpicosecond duration, it emits a pulse of terahertz frequency through a nonlinear optical process called optical rectification.[7] Conversely, subjecting a zinc telluride crystal to terahertz radiation causes it to show optical birefringence
and change the polarization of a transmitting light, making it an electro-optic detector.
compound semiconductors. By adding manganese
as an additional dopant (ZnTe:V:Mn), its photorefractive yield can be significantly increased.
References
- ^ ISBN 1-4398-5511-0.
- ^ ISBN 1-4398-5511-0.
- PMID 27877752.
- ^ O'Dell, Dakota (2010). MBE Growth and Characterization of ZnTe and Nitrogen-doped ZnTe on GaAs(100) Substrates, Department of Physics, University of Notre Dame.
- ^ Kittel, C. (1976) Introduction to Solid State Physics, 5th edition, p. 28.
- .
- ^ THz Generation and Detection in ZnTe. chem.yale.edu
External links
Wikimedia Commons has media related to Zinc telluride.
- National Compound Semiconductor Roadmap (Office of Naval research) – Accessed April 2006