Tin telluride
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IUPAC name
Tin telluride
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Other names
Tin(II) telluride, Stannous telluride
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Identifiers | |
3D model (
JSmol ) |
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ECHA InfoCard
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100.031.728 |
PubChem CID
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CompTox Dashboard (EPA)
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Properties | |
SnTe | |
Molar mass | 246.31 g/mol |
Appearance | gray cubic crystals |
Density | 6.445 g/cm3 [2] |
Melting point | 790 °C (1,450 °F; 1,060 K) |
Band gap | 0.18 eV [3] |
Electron mobility | 500 cm2 V−1 s−1 |
Structure | |
Halite (cubic), cF8 | |
Fm3m, No. 225 | |
a = 0.63 nm
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Octahedral (Sn2+) Octahedral (Se2−) | |
Thermochemistry | |
Heat capacity (C)
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185 J K−1 kg−1 |
Related compounds | |
Other anions
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Tin(II) oxide Tin(II) sulfide Tin selenide |
Other cations
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Carbon monotelluride Silicon monotelluride Germanium telluride Lead telluride |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Tin telluride is a compound of
Tin telluride normally forms p-type semiconductor (Extrinsic semiconductor) due to tin vacancies and is a low temperature superconductor.[4]
SnTe exists in three crystal phases. At Low temperatures, where the concentration of hole carriers is less than 1.5x1020 cm−3 , Tin Telluride exists in rhombohedral phase also known as α-SnTe. At room temperature and atmospheric pressure, Tin Telluride exists in NaCl-like cubic crystal phase, known as β-SnTe. While at 18 kbar pressure, β-SnTe transforms to γ-SnTe, orthorhombic phase, space group Pnma.[5] This phase change is characterized by 11 percent increase in density and 360 percent increase in resistance for γ-SnTe.[6]
Tin telluride is a thermoelectric material. Theoretical studies imply that the n-type performance may be particularly good.[7]
Thermal properties
- Standard enthalpy of formation: - 14.6 ± 0.3 kcal/mole at 298 K
- Standard Enthalpy of sublimation: 52.1 ± 1.4 kcal/mole at 298 K
- Heat capacity: 12.1 + 2.1 x 10−3 T cal/deg
- Bond-dissociation energy for the reaction SnTe(g)-> Sn(g)+ Te(g) : 80.6 ± 1.5 kcal/mole at 298 K
- Entropy: 24.2±0.1 cal/mole.deg
- Enthalpy of Dimerization for the reaction Sn2Te2->2SnTe(g) :46.9 ± 6.0 kcal/mole [8]
Applications
Generally
References
This article needs additional citations for verification. (May 2009) |
- ^
Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 4–90, ISBN 978-0-8493-0594-8
- ^ Beattie, A. G., J. Appl. Phys., 40, 4818–4821, 1969.
- ^ O. Madelung, U. Rössler, M. Schulz; SpringerMaterials; sm_lbs_978-3-540-31360-1_859 (Springer-Verlag GmbH, Heidelberg, 1998), http://materials.springer.com/lb/docs/sm_lbs_978-3-540-31360-1_859;
- .
- ISBN 978-3-540-64583-2.
- ^ Kafalas, J. A.; Mariano, A. N., High-Pressure Phase Transition in Tin Telluride. Science 1964, 143 (3609), 952-952
- S2CID 119223416.
- ^ Colin, R.; Drowart, J., Thermodynamic study of tin selenide and tin telluride using a mass spectrometer. Transactions of the Faraday Society 1964, 60 (0), 673-683, DOI: 10.1039/TF9646000673.
- ^ Lovett, D. R. Semimetals and narrow-bandgap semiconductors; Pion Limited: London, 1977; Chapter 7.
- ^ Das, V. D.; Bahulayan, C., Variation of electrical transport properties and thermoelectric figure of merit with thickness in 1% excess Te-doped Pb 0.2 Sn 0.8 Te thin films. Semiconductor Science and Technology 1995, 10 (12), 1638.