Ballistic electron emission microscopy
Ballistic electron emission microscopy or BEEM is a technique for studying
ballistic electron transport through a variety of materials and material interfaces. BEEM is a three terminal scanning tunneling microscopy (STM) technique that was invented in 1988 at the Jet Propulsion Laboratory in Pasadena, California by L. Douglas Bell, Michael H. Hecht, and William Kaiser.[1][2][3][4] The most popular interfaces to study are metal-semiconductor Schottky diodes
, but metal-insulator-semiconductor systems can be studied as well.
When performing BEEM, electrons are injected from a STM tip into a grounded metal base of a Schottky diode. A small fraction of these electrons will travel ballistically through the metal to the metal-semiconductor interface where they will encounter a
nanometer spatial resolution. In addition, the narrow energy distribution of electrons
tunneling from the STM tip gives BEEM a high energetic resolution (about 0.02 eV).
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