180 nm process
| Semiconductor device fabrication |
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 |
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MOSFET scaling (process nodes) |
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Future
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The 180 nm process is a
semiconductor process technology that was commercialized around the 1998–2000 timeframe by leading semiconductor companies, starting with TSMC[1] and Fujitsu,[2] then followed by Sony, Toshiba,[3] Intel, AMD, Texas Instruments and IBM
.
History
The origin of the 180 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years.[citation needed] The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS).
Some of the first
Coppermine family of Pentium III processors. This was the first technology using a gate length shorter than that of light used for contemporary lithography, which had a wavelength of 193 nm.[citation needed
]
Some more recent[PIC) are using this technology because it is typically low cost and does not require upgrading of existing equipment.[citation needed] In 2022, Google sponsored open-source hardware projects using GlobalFoundries 180nm MCU (microcontroller) process on multi-project wafers.[4]
In 1988, an
dual-gate MOSFET using a CMOS process.[5] The 180 nm CMOS process was later commercialized by TSMC in 1998,[1] and then Fujitsu in 1999.[2]
Processors using 180 nm manufacturing technology
- Intel Coppermine E—October 1999
- Radeon 7000—2000
- Nintendo GekkoCPU—2000
- Sony Graphics Synthesizer—March 2000[3]
- Athlon Thunderbird—June 2000
- AMD Duron Spitfire–June 2000
- AMD Duron Morgan–August 2001
- Intel Celeron (Willamette)—May 2002
- Motorola PowerPC 7445 and 7455 (Apollo 6)—January 2002
References
- ^ a b "0.18-micron Technology". TSMC. Retrieved 30 June 2019.
- ^ a b 65nm CMOS Process Technology
- ^ a b "EMOTION ENGINE AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION BECOME ONE CHIP" (PDF). Sony. April 21, 2003. Retrieved 26 June 2019.
- ^ "Google funds open source silicon manufacturing shuttles for GlobalFoundries PDK". Google Open Source Blog. Retrieved 2022-11-16.
- S2CID 114078857.
| Preceded by 250 nm |
CMOS manufacturing processes | Succeeded by 130 nm |