Gallium arsenide antimonide
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| Related compounds | |
Related compounds
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Gallium arsenide; Gallium antimonide; Gallium indium arsenide antimonide phosphide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (
III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide
(GaSb).
Preparation
GaAsSb films have been grown by
substrates. It is often incorporated into layered heterostructures with other III-V compounds.Thermodynamic Stability
GaAsSb has a
InP
and is sometimes used in heterostructures grown on that substrate.
Electronic Properties
The
direct, like in GaAs and GaSb. Furthermore, the bandgap displays a minimum in composition at approximately x = 0.8 at T = 300 K, reaching a minimum value of Eg = 0.67 eV, which is slightly below that of pure GaSb.[1]
Applications
GaAsSb has been extensively studied for use in
InP to create and study a two-dimensional electron gas.[6]
A GaAsSb/GaAs-based heterostructure was used to make a near-infrared photodiode with peak responsivity centered at 1.3 µm.[7]
GaAsSb can be incorporated into III-V–based multi-junction solar cells to reduce the tunneling distance and increase the tunneling current between adjacent cells.[8]
References
- ^ doi:10.1063/1.94874.
- ISBN 978-3-540-42876-3.
- .
- .
- .
- .
- ISSN 1558-4542.
- ^ Klem, J. F., Zolper, J. C. (1997), Semiconductor tunnel junction with enhancement layer, retrieved 27 December 2023.