Indium arsenide antimonide

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Indium arsenide antimonide, also known as indium antimonide arsenide or InAsSb (

III-V semiconductor compound. It can be considered as an alloy between indium arsenide (InAs) and indium antimonide
(InSb). The alloy can contain any ratio between arsenic and antimony. InAsSb refers generally to any composition of the alloy.

Preparation

InAsSb films have been grown by

liquid phase epitaxy (LPE) on gallium arsenide and gallium antimonide
substrates. It is often incorporated into layered heterostructures with other III-V compounds.

Thermodynamic stability

Between 524 °C and 942 °C (the melting points of pure InSb and InAs, respectively), InAsSb can exist at a two-phase liquid-solid equilibrium, depending on temperature and average composition of the alloy.[1][2]

InAsSb possesses an additional miscibility gap at temperatures below approximately 503 °C.[2] This means that intermediate compositions of the alloy below this temperature are thermodynamically unstable and can spontaneously separate into two phases: one InAs-rich and one InSb-rich. This limits the compositions of InAsSb that can be obtained by near-equilibrium growth techniques, such as LPE, to those outside of the miscibility gap.[1] However, compositions of InAsSb within the miscibility gap can be obtained with non-equilibrium growth techniques, such as MBE and MOVPE. By carefully selecting the growth conditions and maintaining relatively low temperatures during and after growth, it is possible to obtain compositions of InAsSb within the miscibility gap that are kinetically stable.

Electronic properties

electron volts as a function of composition (x) and temperature (K).[1]
InAsSb bandgap in electron volts as a function of composition (x) at 300 K (room temperature, blue line) and 77 K (liquid nitrogen
temperature, red line).

The

eV as a function of composition (0 < x < 1) and temperature (in Kelvin):[1]

This equation is plotted in the figures, using a suggested bowing parameter of C = 0.75 eV. Slightly different relations have also been suggested for Eg as a function of composition and temperature, depending on the material quality, strain, and defect density.

Applications

Because of its small direct bandgap, InAsSb has been extensively studied over the last few decades, predominantly for use in

heterostructure
and detector configuration that is used, InAsSb-based detectors can operate at wavelengths ranging from approximately 2 μm to 11 μm.

See also

  • Mercury cadmium telluride - a ternary II-VI compound that has a widely tunable bandgap and is used in commercial mid- and long-wave infrared photodetectors.
  • Aluminium arsenide antimonide - a ternary III-V compound that is used as a barrier material in some InAsSb-based photodetectors.

References

  1. ^
    PMID 33317004
    .
  2. ^
    doi:10.1016/0022-5088(89)90228-2
    .
  3. doi:10.1063/1.1368156
    .

External links
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