Through-silicon via
In
Classification
Dictated by the manufacturing process, there exist three different types of TSVs: via-first TSVs are fabricated before the individual component (
TSVs through the front end of line (FEOL) have to be carefully accounted for during the EDA and manufacturing phases. That is because TSVs induce thermo-mechanical stress in the FEOL layer, thereby impacting the transistor behaviour.[4]
Applications
Image sensors
3D packages
A 3D package (
3D integrated circuits
A
History
The origins of the TSV concept can be traced back to William Shockley's patent "Semiconductive Wafer and Method of Making the Same" filed in 1958 and granted in 1962,[7][8] which was further developed by IBM researchers Merlin Smith and Emanuel Stern with their patent "Methods of Making Thru-Connections in Semiconductor Wafers" filed in 1964 and granted in 1967,[9][10] the latter describing a method for etching a hole through silicon.[11] TSV was not originally designed for 3D integration, but the first 3D chips based on TSV were invented later in the 1980s.[12]
The first
The inter-chip via (ICV) method was developed in 1997 by a Fraunhofer–Siemens research team including Peter Ramm, D. Bollmann, R. Braun, R. Buchner, U. Cao-Minh, Manfred Engelhardt and Armin Klumpp.[17] It was a variation of the TSV process, and was later called SLID (solid liquid inter-diffusion) technology.[18]
The term "through-silicon via" (TSV) was coined by Tru-Si Technologies researchers Sergey Savastiouk, O. Siniaguine, and E. Korczynski, who proposed a TSV method for a 3D wafer-level packaging (WLP) solution in 2000.[19]
References
- ^ 2009 International Technology Roadmap for Semiconductors (ITRS). 5 September 2009. pp. 4–5.
- ^ .
- S2CID 29564868.
- ISBN 978-1-4419-9541-4.
- ^ Von Trapp, Francoise (15 September 2014). "The Future of Image Sensors is Chip Stacking". 3D InCites.
- ^ "JEDEC Publishes Breakthrough Standard for Wide I/O Mobile DRAM". JEDEC (Press release). Arlington, VA. 5 January 2012. Retrieved 1 December 2014.
- ^ Von Trapp, Francoise (24 April 2010). "Who Invented the TSV and When?". 3D InCites.
- ^ U.S. patent 3,044,909
- ISBN 978-3-319-18674-0.
- ^ U.S. patent 3,343,256
- ISBN 978-0-12-410484-6.
- ISBN 978-0-07-175380-7.
TSV is the heart of 3-D IC/Si integration and is a more-than-26-year-old technology. Even the TSV (for electrical feed-through) was invented by William Shockley in 1962 (the patent was filed on October 23, 1958), but it was not originally designed for 3-D integration.
- ^ ISBN 978-3-319-18675-7.
- ^ a b Fukushima, T.; Tanaka, T.; Koyanagi, Mitsumasa (2007). "Thermal Issues of 3D ICs" (PDF). SEMATECH. Tohoku University. Archived from the original (PDF) on 16 May 2017. Retrieved 16 May 2017.
- S2CID 62780117.
- ISBN 978-3-527-62306-8.
- S2CID 22232571.
- S2CID 91179768.
- S2CID 110397071.
- ^ ISBN 978-3-319-18675-7.
- ^ a b "History: 2010s". SK Hynix. Archived from the original on 17 May 2021. Retrieved 19 July 2019.
External links
- "3D Integration: A Revolution in Design". Real World Tech. 2 May 2007.
- U.S. patent 7,683,459
- U.S. patent 7,633,165