Semiconductor memory
Computer memory and Computer data storage types |
---|
Volatile |
Non-volatile |
Semiconductor memory is a
Most types of semiconductor memory have the property of
As of 2017[update], sales of semiconductor memory chips are $124 billion annually, accounting for 30% of the semiconductor industry.[6] Shift registers, processor registers, data buffers and other small digital registers that have no memory address decoding mechanism are typically not referred to as memory although they also store digital data.
Description
In a semiconductor memory chip, each
Data is accessed by means of a binary number called a
The two basic operations performed by a memory chip are "read", in which the data contents of a memory word is read out (nondestructively), and "write" in which data is stored in a memory word, replacing any data that was previously stored there. To increase data rate, in some of the latest types of memory chips such as DDR SDRAM multiple words are accessed with each read or write operation.
In addition to standalone memory chips, blocks of semiconductor memory are integral parts of many computer and data processing integrated circuits. For example, the
Types
Volatile memory
RAM (Random-access memory) – This has become a generic term for any semiconductor memory that can be written to, as well as read from, in contrast to ROM (below), which can only be read. All semiconductor memory, not just RAM, has the property of random access.
- DRAM (MOS capacitor to store each bit. This type of RAM is the cheapest and highest in density, so it is used for the main memory in computers. However, the electric charge that stores the data in the memory cells slowly leaks out, so the memory cells must be periodically refreshed(rewritten) which requires additional circuitry. The refresh process is handled internally by the computer and is transparent to its user.
- FPM DRAM (Fast page mode DRAM) – An older type of asynchronous DRAM that improved on previous types by allowing repeated accesses to a single "page" of memory to occur at a faster rate. Used in the mid-1990s.
- EDO DRAM (Extended data out DRAM) – An older type of asynchronous DRAM which had faster access time than earlier types by being able to initiate a new memory access while data from the previous access was still being transferred. Used in the later part of the 1990s.
- VRAM (video adapters(video cards).
- SDRAM (memory bus. This allowed the chip to process multiple memory requests simultaneously using pipelining, to increase the speed. The data on the chip is also divided into banks which can each work on a memory operation simultaneously. This became the dominant type of computer memory by about the year 2000.
- double pumping(transferring data on both the rising and falling edges of the clock pulse). Extensions of this idea are the current (2012) technique being used to increase memory access rate and throughput. Since it is proving difficult to further increase the internal clock speed of memory chips, these chips increase the transfer rate by transferring more data words on each clock cycle
- DDR2 SDRAM – Transfers 4 consecutive words per internal clock cycle
- DDR3 SDRAM – Transfers 8 consecutive words per internal clock cycle.
- DDR4 SDRAM – Transfers 16 consecutive words per internal clock cycle.
- RDRAM (Rambus DRAM) – An alternate double data rate memory standard that was used on some Intel systems but ultimately lost out to DDR SDRAM.
- XDR DRAM (Extreme data rate DRAM)
- SGRAM (bit maskingand block write, and can open two pages of memory at once.
- GDDR SDRAM (Graphics DDR SDRAM)
- HBM (High Bandwidth Memory) – A development of SDRAM used in graphics cards that can transfer data at a faster rate. It consists of multiple memory chips stacked on top of one another, with a wider data bus.
- PSRAM (game consoles such as the Wii.
- FPM DRAM (
- SRAM (cache memoriesin computers.
- CAM (cache memory.
Non-volatile memory
- ROM (Read-only memory) – This is designed to hold permanent data, and in normal operation is only read from, not written to. Although many types can be written to, the writing process is slow and usually all the data in the chip must be rewritten at once. It is usually used to store system software which must be immediately accessible to the computer, such as the BIOS program which starts the computer, and the software (microcode) for portable devices and embedded computers such as microcontrollers.
- MROM (Mask programmed ROM or Mask ROM) – In this type the data is programmed into the chip when the chip is manufactured, so it is only used for large production runs. It cannot be rewritten with new data.
- PROM (Programmable read-only memory) – In this type the data is written into an existing PROM chip before it is installed in the circuit, but it can only be written once. The data is written by plugging the chip into a device called a PROM programmer.
- EPROM (ultraviolet light to erase the existing data, and plugging it into a PROM programmer. The IC package has a small transparent "window" in the top to admit the UV light. It is often used for prototypes and small production run devices, where the program in it may have to be changed at the factory.
4M EPROM, showing transparent window used to erase the chip - EEPROM ( program in most computers, so that it can be updated.
- MROM (
- NVRAM (Non-volatile random-access memory)
- FRAM (Ferroelectric RAM) – One type of nonvolatile RAM.
- cellphones.
History
Early
MOS memory
The advent of the
In 1965, J. Wood and R. Ball of the
The term "memory" when used with reference to computers most often refers to volatile random-access memory (RAM). The two main types of volatile RAM are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963,[9] followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964.[14] SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data.[19] Commercial use of SRAM began in 1965, when IBM introduced their SP95 SRAM chip for the System/360 Model 95.[9]
The term "memory" is also often used to refer to
Applications
MOS memory type | Abbr. | MOS memory cell | Applications |
---|---|---|---|
Static random-access memory | SRAM | MOSFETs
|
|
Dynamic random-access memory | DRAM | MOS capacitor
|
|
Ferroelectric random-access memory
|
FRAM | MOSFET, Ferroelectric capacitor | |
Read-only memory | ROM | MOSFET | |
Erasable programmable read-only memory
|
EPROM | Floating-gate MOSFET | |
Electrically erasable programmable read-only memory
|
EEPROM | Floating-gate MOSFET | |
Flash memory | Flash | Floating-gate MOSFET | tablet computers[40]
|
Non-volatile random-access memory | NVRAM | Floating-gate MOSFETs |
See also
References
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The i1103 was manufactured on a 6-mask silicon-gate P-MOS process with 8 μm minimum features. The resulting product had a 2,400 µm, 2 memory cell size, a die size just under 10 mm2, and sold for around $21.
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The first commercial synchronous DRAM, the Samsung 16-Mbit KM48SL2000, employs a single-bank architecture that lets system designers easily transition from asynchronous to synchronous systems.
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