Thin-film solar cell

Source: Wikipedia, the free encyclopedia.

Thin-film solar cells are made by depositing one or more thin layers (

(a-Si, TF-Si).

Solar cells are often classified into so-called generations based on the active (sunlight-absorbing) layers used to produce them, with the most well-established or first-generation solar cells being made of

solar PV systems. Most thin-film solar cells are classified as second generation, made using thin layers of well-studied materials like amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established materials are classified as third-generation or emerging solar cells. This includes some innovative thin-film technologies, such as perovskite, dye-sensitized, quantum dot, organic, and CZTS
thin-film solar cells.

Thin-film cells have several advantages over first-generation silicon solar cells, including being lighter and more flexible due to their thin construction. This makes them suitable for use in

non-renewable sources for electricity generation in terms of human toxicity and heavy-metal emissions
.

Despite initial challenges with efficient light conversion, especially among third-generation PV materials, as of 2023 some thin-film solar cells have reached efficiencies of up to 29.1% for single-junction thin-film GaAs cells, exceeding the maximum of 26.1% efficiency for standard single-junction first-generation solar cells. Multi-junction concentrator cells incorporating thin-film technologies have reached efficiencies of up to 47.6% as of 2023.[1]

Still, many thin-film technologies have been found to have shorter operational lifetimes and larger degradation rates than first-generation cells in accelerated life testing, which has contributed to their somewhat limited deployment. Globally, the PV marketshare of thin-film technologies remains around 5% as of 2023.[2] However, thin-film technology has become considerably more popular in the United States, where CdTe cells alone accounted for nearly 30% of new utility-scale deployment in 2022.[3]

History

Market-share of thin-film technologies in terms of annual production since 1980

Early research into thin-film solar cells began in the 1970s. In 1970, Zhores Alferov's team at Ioffe Institute created the first gallium arsenide (GaAs) solar cells, later winning the 2000 Nobel prize in Physics for this and other work.[4][5] Two years later in 1972, Prof. Karl Böer founded the Institute of Energy Conversion (IEC) at the University of Delaware to further thin-film solar research. The institute first focused on copper sulfide/cadmium sulfide (Cu2S/CdS) cells and later expanded to zinc phosphide (Zn3P2) and amorphous silicon (a-Si) thin-films as well in 1975.[6] In 1973, the IEC debuted a solar-powered house, Solar One, in the first example of residential building-integrated photovoltaics.[7] In the next decade, interest in thin-film technology for commercial use and aerospace[8] applications increased significantly, with several companies beginning development of amorphous silicon thin-film solar devices.[9] Thin-film solar efficiencies rose to 10% for Cu2S/CdS in 1980,[10] and in 1986 ARCO Solar launched the first commercially-available thin-film solar cell, the G-4000, made from amorphous silicon.[11]

In the 1990s and 2000s, thin-film solar cells saw significant increases in maximum efficiencies and expansion of existing thin-film technologies into new sectors. In 1992, a thin-film solar cell with greater than 15% efficiency was developed at University of South Florida.[12] Only seven years later in 1999, the U.S. National Renewable Energy Laboratory (NREL) and Spectrolab collaborated on a three-junction gallium arsenide solar cell that reached 32% efficiency.[13] That same year, Kiss + Cathcart designed transparent thin-film solar cells for some of the windows in 4 Times Square, generating enough electricity to power 5-7 houses.[14][12] In 2000, BP Solar introduced two new commercial solar cells based on thin-film technology.[12] In 2001, the first organic thin-film solar cells were developed at the Johannes Kepler University of Linz. In 2005, GaAs solar cells got even thinner with the first free-standing (no substrate) cells introduced by researchers at Radboud University.[15]

This was also a time of significant advances in the exploration of new third-generation solar materials–materials with the potential to overcome theoretical efficiency limits for traditional solid-state materials.[16] In 1991, the first high-efficiency dye-sensitized solar cell was developed, replacing the ordinary solid semiconducting (active) layer of the cell with a liquid electrolyte mixture containing light-absorbing dye.[17] In the early 2000s, development of quantum dot solar cells began,[16] technology later certified by NREL in 2011.[18] In 2009, researchers at the University of Tokyo reported a new type solar cell using perovskites as the active layer and achieving over 3% efficiency,[19] building on Murase Chikao's 1999 work which created a perovskite layer capable of absorbing light.[20]

In the 2010s and early 2020s, innovation in thin-film solar technology has included efforts to expand third-generation solar technology to new applications and to decrease production costs, as well as significant efficiency improvements for both second and third generation materials. In 2015, Kyung-In Synthetic released the first inkjet solar cells, flexible solar cells made with industrial printers.[21] In 2016, Vladimir Bulović's Organic and Nanostructured Electronics (ONE) Lab at the Massachusetts Institute of Technology (MIT) created thin-film cells light enough to sit on top of soap bubbles.[22] In 2022, the same group introduced flexible organic thin-film solar cells integrated into fabric.[23][24]

Thin-film solar technology captured a peak global market share of 32% of the new photovoltaic deployment in 1988 before declining for several decades and reaching another, smaller peak of 17% again in 2009.[25][26] Market share then steadily declined to 5% in 2021 globally,[25] however thin-film technology captured approximately 19% of the total U.S. market share in the same year, including 30% of utility-scale production.[27]

Theory of operation

In a typical solar cell, the photovoltaic effect is used to generate electricity from sunlight. The light-absorbing or "active layer" of the solar cell is typically a semiconducting material, meaning that there is a gap in its energy spectrum between the valence band of localized electrons around host ions and the conduction band of higher-energy electrons which are free to move throughout the material. For most semiconducting materials at room temperature, electrons which have not gained extra energy from another source will exist largely in the valence band, with few or no electrons in the conduction band. When a solar photon reaches the semiconducting active layer in a solar cell, electrons in the valence band can absorb the energy of the photon and be excited into the conduction band, allowing them to move freely throughout the material. When this happens, an empty electron state (or hole) is left behind in the valence band. Together, the conduction band electron and the valence band hole are called an electron-hole pair. Both the electron and the hole in the electron-hole pair can move freely throughout the material as electricity.[28] However, if the electron-hole pair is not separated, the electron and hole can recombine into the lower-energy original state, releasing a photon of the corresponding energy. In thermodynamic equilibrium, the forward process (absorbing a photon to excite an electron-hole pair) and reverse process (emitting a photon to destroy an electron-hole pair) must occur at the same rate by the principle of detailed balance. Therefore, to construct a solar cell from a semiconducting material and extract current during the excitation process, the electron and hole of the electron-hole pair must be separated. This can be achieved in a variety of different ways, but the most common is with a p-n junction, where a positively doped (p-type) semiconducting layer and a negatively doped (n-type) semiconducting layer meet, creating a chemical potential difference which draws electrons one direction and holes the other, separating the electron-hole pair.[29] This may instead be achieved using metal contacts with different work functions, as in a Schottky-junction cell.

In a thin-film solar cell, the process is largely the same but the active semiconducting layer is made much thinner. This may be made possible by some intrinsic property of the semiconducting material used that allows it to convert a particularly large number of photons per thickness. For example, some thin-film materials have a

solar spectrum
, meaning there are many solar photons of the correct energy available to excite electron-hole pairs.

In other thin-film solar cells, the semiconducting layer may be replaced entirely with another light-absorbing material, for example an

photo-active dye molecules in a dye-sensitized solar cell or by quantum dots in a quantum dot solar cell
.

Materials

Cross-section of a TF cell

Thin-film technologies reduce the amount of active material in a cell. The active layer may be placed on a rigid substrate made from glass, plastic, or metal or the cell may be made with a flexible substrate like cloth. Thin-film solar cells tend to be cheaper than crystalline silicon cells and have a smaller ecological impact (determined from

life cycle analysis).[31] Their thin and flexible nature also makes them ideal for applications like building-integrated photovoltaics. The majority of film panels have 2-3 percentage points lower conversion efficiencies than crystalline silicon,[32] though some thin-film materials outperform crystalline silicon panels in terms of efficiency. Cadmium telluride (CdTe), copper indium gallium selenide (CIGS) and amorphous silicon
(a-Si) are three of the most prominent thin-film technologies.

Second-generation thin-film materials

Cadmium telluride

energy payback time of all mass-produced PV technologies, and can be as short as eight months in favorable locations.[33]: 31  CdTe also performs better than most other thin-film PV materials across many important environmental impact factors like global warming potential and heavy metal emissions.[34] A prominent manufacturer is the US-company First Solar based in Tempe, Arizona, that produces CdTe-panels with an efficiency of about 18 percent.[35]

Although the toxicity of

anionic form—is comparable to that of platinum in the earth's crust and contributes significantly to the module's cost.[40]

Copper indium gallium selenide (CIGS)

CIGS laboratory record efficiencies (updated 12/02/2024)
Cell Module
Glass substrate 23.6 %[41] 20.3 %[42]
Flexible substrate 22.2 %[43] 18.6 %[44]

Like CdTe, copper indium gallium selenide (CIGS) and its variations are chalcogenide compound semiconductors. CIGS solar cells reached a lab-efficiency above 23 percent (see table) and a share of 0.8 percent in the overall PV market in 2021.[45] Numerous companies have produced CIGS solar cells and modules, however, some of them have significantly reduced or ceased production during the last years.

Setup of a typical CIGS solar cell in an SEM cross section image

Actual research aims at improving properties related to fabrication and functionality by modifying or replacing the individual layers, for example:

Flexible CIGS solar cell, produced at Solarion AG (substrate: polyimid)
  • CIGS solar cells show a particularly low loss in efficiency, when deposited on a flexible substrate instead of glass (see table), hence they are considered promising candidates for bendable and lightweight
    solar modules.[48]

Apart from the development potential of the other layers in the solar cell, the absorber material CIGS has the remarkable property, that its

It is also possible to partially replace copper by silver and selenium by sulfur yielding the compound (AgzCu1-z)(In1-xGax)(Se1-ySy)2. In order to distinguish the sulfur-free compound, it is sometimes abbrievated CIGSe, while the acronym CIGS can refer to both sulfur and selenium containing compounds. The silver containing compound is sometimes referred to as ACIGS. Variations of the CIGS composition are subject to current research and in part also fabricated in industry.

Silicon

Possible crystal structures of silicon.

There are three prominent silicon thin-film architectures:

  • Amorphous silicon cells
  • Amorphous / microcrystalline tandem cells (micromorph)
  • Thin-film polycrystalline silicon on glass.[49]
Amorphous silicon

Amorphous silicon (a-Si) is a non-crystalline, allotropic form of silicon and the most well-developed thin film technology to-date. Thin-film silicon is an alternative to conventional wafer (or bulk) crystalline silicon. While chalcogenide-based CdTe and CIS thin films cells have been developed in the lab with great success, there is still industry interest in silicon-based thin film cells. Silicon-based devices exhibit fewer problems than their CdTe and CIS counterparts such as toxicity and humidity issues with CdTe cells and low manufacturing yields of CIS due to material complexity. Additionally, due to political resistance to the use non-"green" materials in solar energy production, there is no stigma in the use of standard silicon.

This type of thin-film cell is mostly fabricated by a technique called

transparent conducting oxide. Other methods used to deposit amorphous silicon on a substrate include sputtering and hot wire chemical vapor deposition techniques.[50]

a-Si is attractive as a solar cell material because it's an abundant, non-toxic material. It requires a low processing temperature and enables a scalable production upon a flexible, low-cost substrate with little silicon material required. Due to its bandgap of 1.7 eV, amorphous silicon also absorbs a very broad range of the

light spectrum, that includes infrared and even some ultraviolet and performs very well at weak light. This allows the cell to generate power in the early morning, or late afternoon and on cloudy and rainy days, contrary to crystalline silicon cells, that are significantly less efficient when exposed at diffuse and indirect daylight.[citation needed
]

However, the efficiency of an a-Si cell suffers a significant drop of about 10 to 30 percent during the first six months of operation. This is called the

p-i-n junction. The amorphous structure of a-Si implies high inherent disorder and dangling bonds, making it a bad conductor for charge carriers. These dangling bonds act as recombination centers that severely reduce carrier lifetime. A p-i-n structure is usually used, as opposed to an n-i-p structure. This is because the mobility of electrons in a-Si:H is roughly 1 or 2 orders of magnitude larger than that of holes, and thus the collection rate of electrons moving from the n- to p-type contact is better than holes moving from p- to n-type contact. Therefore, the p-type layer should be placed at the top where the light intensity is stronger, so that the majority of the charge carriers crossing the junction are electrons.[51]

Tandem-cell using a-Si/μc-Si

A layer of amorphous silicon can be combined with layers of other allotropic forms of silicon to produce a multi-junction solar cell. When only two layers (two p-n junctions) are combined, it is called a tandem-cell. By stacking these layers on top of one other, a broader range of the light spectra is absorbed, improving the cell's overall efficiency.

In

microcrystalline silicon (μc-Si) is combined with amorphous silicon, creating a tandem cell. The top a-Si layer absorbs the visible light, leaving the infrared part to the bottom μc-Si layer. The micromorph stacked-cell concept was pioneered and patented at the Institute of Microtechnology (IMT) of the Neuchâtel University in Switzerland,[52] and was licensed to TEL Solar. A new world record PV module based on the micromorph concept with 12.24% module efficiency was independently certified in July 2014.[53]

Because all layers are made of silicon, they can be manufactured using PECVD. The band gap of a-Si is 1.7 eV and that of c-Si is 1.1 eV. The c-Si layer can absorb red and infrared light. The best efficiency can be achieved at transition between a-Si and c-Si. As nanocrystalline silicon (nc-Si) has about the same bandgap as c-Si, nc-Si can replace c-Si.[54]

United Solar Ovonic roll-to-roll solar photovoltaic production line with 30 MW annual capacity
Tandem-cell using a-Si/pc-Si

Amorphous silicon can also be combined with

conduction bands
(band tails).

Polycrystalline silicon on glass

A new attempt to fuse the advantages of bulk silicon with those of thin-film devices is thin film polycrystalline silicon on glass. These modules are produced by depositing an antireflection coating and doped silicon onto textured glass substrates using plasma-enhanced chemical vapor deposition (PECVD). The texture in the glass enhances the efficiency of the cell by approximately 3% by reducing the amount of incident light reflecting from the solar cell and trapping light inside the solar cell. The silicon film is crystallized by an annealing step, temperatures of 400–600 Celsius, resulting in polycrystalline silicon.

These new devices show energy conversion efficiencies of 8% and high manufacturing yields of >90%. Crystalline silicon on glass (CSG), where the polycrystalline silicon is 1–2 micrometres, is noted for its stability and durability; the use of thin film techniques also contributes to a cost savings over bulk photovoltaics. These modules do not require the presence of a transparent conducting oxide layer. This simplifies the production process twofold; not only can this step be skipped, but the absence of this layer makes the process of constructing a contact scheme much simpler. Both of these simplifications further reduce the cost of production. Despite the numerous advantages over alternative design, production cost estimations on a per unit area basis show that these devices are comparable in cost to single-junction amorphous thin film cells.[49]

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct bandgap semiconductor and is a very common material used for single-crystalline thin-film solar cells. GaAs solar cells have continued to be one of the highest performing thin-film solar cells due to their exceptional heat resistant properties and high efficiencies.[56] As of 2019, single-crystalline GaAs cells have shown the highest solar cell efficiency of any single-junction solar cell with an efficiency of 29.1%.[57] This record-holding cell achieved this high efficiency by implementing a back mirror on the rear surface to increase photon absorption which allowed the cell to attain an impressive short-circuit current density and an open-circuit voltage value near the Shockley–Queisser limit.[58] As a result, GaAs solar cells have nearly reached their maximum efficiency although improvements can still be made by employing light trapping strategies.[59]

GaAs thin-films are most commonly fabricated using epitaxial growth of the semiconductor on a substrate material. The epitaxial lift-off (ELO) technique, first demonstrated in 1978, has proven to be the most promising and effective. In this method, the thin film layer is peeled off of the substrate by selectively etching a sacrificial layer that was placed between the epitaxial film and substrate.[60] The GaAs film and the substrate remain minimally damaged through the separation process, allowing for the reuse of the host substrate.[61] With reuse of the substrate the fabrication costs can be reduced, but not completely forgone, since the substrate can only be reused a limited number of times.[59] This process is still relatively costly and research is still being done to find more cost-effective ways of growing the epitaxial film layer onto a substrate.

Despite the high performance of GaAs thin-film cells, the expensive material costs hinder their ability for wide-scale adoption in the solar cell industry. GaAs is more commonly used in multi-junction solar cells for solar panels on spacecraft, as the larger power to weight ratio lowers the launch costs in space-based solar power (InGaP/(In)GaAs/Ge cells). They are also used in concentrator photovoltaics, an emerging technology best suited for locations that receive much sunlight, using lenses to focus sunlight on a much smaller, thus less expensive GaAs concentrator solar cell.

An experimental silicon based solar cell developed at the Sandia National Laboratories

Third-generation (emerging) thin-film materials