Static induction thyristor
The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state.[1] It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds.[2][3][4]
History
The first static induction thyristor was invented by Japanese engineer
forward bias and had a small turn-off time. It had a self controlled gate turn-off thyristor that was commercially available through Tokyo Electric Co. (now Toyo Engineering Corporation) in 1988. The initial device consisted of a p+nn+ diode and a buried p+ grid.[citation needed
]
In 1999, an analytical model of the SITh was developed for the
PSPICE circuit simulator.[6] In 2010, a newer version of SITh was developed by Zhang Caizhen, Wang Yongshun, Liu Chunjuan and Wang Zaixing, the new feature of which was its high forward blocking voltage.[7]
See also
References
- ISBN 978-7-80003-315-5.
- .
- .
- S2CID 32745943.
- ISBN 9780750304931.
- OCLC 1004551313.
- S2CID 250665918.
External links
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