VMOS

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This article is about a type of transistor. For the RCA computer operating system, see Virtual Memory Operating System.
For the virtual machine Android app, see VMOS (software).
The VMOS structure has a V-groove at the gate region

A VMOS (/ˈviːmɒs/) (vertical metal oxide semiconductor or V-groove MOS) transistor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET). VMOS is also used to describe the V-groove shape vertically cut into the substrate material.[1]

The "V" shape of the

source to the drain of the device. The shape of the depletion region
creates a wider channel, allowing more current to flow through it.

During operation in blocking mode, the highest electric field occurs at the N+/p+ junction. The presence of a sharp corner at the bottom of the groove enhances the electric field at the edge of the channel in the depletion region, thus reducing the breakdown voltage of the device.[2] This electric field launches electrons into the gate oxide and consequently, the trapped electrons shift the threshold voltage of the MOSFET. For this reason, the V-groove architecture is no longer used in commercial devices.

The device's use was a

power device until more suitable geometries, like the UMOS (or Trench-Gate MOS) were introduced in order to lower the maximum electric field
at the top of the V shape and thus leading to higher maximum voltages than in case of the VMOS.

History

The first

Mohamed Atalla and Dawon Kahng at Bell Labs in 1959.[3] The V-groove construction was pioneered by Jun-ichi Nishizawa in 1969,[4] initially for the static induction transistor (SIT), a type of junction field-effect transistor (JFET).[5]

The VMOS was invented by

VDMOS).[9]

In 1978,

American Microsystems (AMI) released the S2811.[10][11] It was the first integrated circuit chip specifically designed as a digital signal processor (DSP), and was fabricated using VMOS, a technology that had previously not been mass-produced.[11]

References

  1. doi:10.1016/0038-1101(74)90026-4
    .
  2. ISBN 9780387473130
  3. Electronic Design
    . 21 April 2017. Retrieved 23 July 2019.
  4. ISBN 9780080508047
    .
  5. ^ U.S. patent 4,295,267
  6. ^ a b "Advances in Discrete Semiconductors March On". Power Electronics Technology. Informa: 52–6. September 2005. Archived (PDF) from the original on 22 March 2006. Retrieved 31 July 2019.
  7. ISBN 9780824780500
    .
  8. ^ U.S. patent 3,924,265
  9. ISBN 9780080508047
    .
  10. ^ "1979: Single Chip Digital Signal Processor Introduced". The Silicon Engine. Computer History Museum. Retrieved 14 October 2019.
  11. ^ a b Taranovich, Steve (August 27, 2012). "30 years of DSP: From a child's toy to 4G and beyond". EDN. Retrieved 14 October 2019.
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